考虑寄生振荡的IGBT分段暂态模型对电磁干扰预测的影响分析

doi:10.19595/j.cnki.1000-6753.tces.201416

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Abstract The di/dt and du/dt of the insulated gate bipolar transistor (IGBT) switching process are the major factors affecting the electromagnetic interference (EMI) level of the converter. The parasitic oscillation of IGBT is an important part of high frequency EMI, and the EMI peak appears at the oscillation frequency. In this paper, an IGBT segmented transient model considering parasitic oscillations was presented. The effects of parasitic parameters and device nonlinear capacitance on switching characteristics were analyzed. The voltage and current change rates at different stages were calculated respectively. Then, a diode-clamped inductive load test platform was built. The current and voltage waveforms of IGBT were obtained, and the spectrum characteristics of the segmented model and the actual waveform were analyzed and compared. Finally, it is verified through experiments that the oscillation process in the model is the key factor affecting the current spectrum characteristics, and the three-stage equivalent model of C_gc can significantly improve the accuracy of voltage spectrum prediction. The proposed model improves the prediction accuracy of the IGBT interference source spectrum and can be used to evaluate the EMI level of the actual converter.

Key words： Insulated gate bipolar transistor (IGBT) segmented transient model parasitic oscillations spectrum

Received: 26 October 2020

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TM46

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	Articles by authors
	Huang Huazhen
	Tong Han
	Wang Ningyan
	Lu Tiebing

Cite this article:

Huang Huazhen,Tong Han,Wang Ningyan等. Analysis of the Influence of IGBT Segmented Transient Model with Parasitic Oscillation on Electromagnetic Interference Prediction[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2434-2445.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201416 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2434

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