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| External Thermal Management of IGBT Based on State Feedback Linearization |
| Sun Lin, Sun Pengju, Luo Quanming, Wang Xulong, Zhou Luowei |
| State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China |
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Abstract Thermal management technology for insulated gate bipolar transistor (IGBT) can reduce junction temperature fluctuations during operation and improve the reliability of devices. In view of the nonlinear characteristics of the IGBT external thermal management system, an affine non-linear model of the system was established. The state feedback linearization method was introduced to linearize the system, which makes up for the current lack of accurate mathematical models in the design of IGBT thermal management control systems. Based on a linear quadratic regulator (LQR), a closed-loop control method was designed to smooth the low-frequency junction temperature fluctuations caused by load fluctuations during IGBT operation by adjusting external cooling conditions. The experimental verification based on the Buck circuit shows that the proposed algorithm can reduce the junction temperature fluctuation by about 60% and increase the life of the IGBT by about 69 times when the load current fluctuates within the range of 60%~100% of the rated value. Finally, the junction temperature was measured online based on the small current injection method, which verified the accuracy of the junction temperature calculation by the proposed model.
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Received: 07 January 2020
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2021, Vol. 36 
