考虑寄生参数影响的碳化硅MOSFET开关暂态分析模型

doi:10.19595/j.cnki.1000-6753.tces.161910

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Abstract To assess the effects of loop and package parasitic parameters on silicon carbide MOSFET switching transient characterization, switching transient equivalent circuit model was firstly established under all the parasitic parameters, and the turn-on and turn-off transient process was analyzed in detail. Then, considering the negative bias voltage and the nonlinearity of device parasitic capacitance, simplified analytic expression of switching transient electric overstress was deduced. Furthermore, the relationship between oscillation frequency and parasitic parameters was also discussed, based on the small signal equivalent circuit. Eventually, the experimental and calculation results show that the analysis model is feasible and can reflect the influence of parasitic parameters on silicon carbide MOSFET switching characteristics.

Key words： Silicon Carbide MOSFET electric overstress oscillation frequency parasitic parameter analytical model

Received: 09 December 2016 Published: 24 April 2018

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TM46

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	Articles by authors
	Ke Junji
	Zhao Zhibin
	Xie Zongkui
	Xu Peng
	Cui Xiang

Cite this article:

Ke Junji,Zhao Zhibin,Xie Zongkui等. Analytical Switching Transient Model for Silicon Carbide MOSFET under the Influence of Parasitic Parameters[J]. Transactions of China Electrotechnical Society, 2018, 33(8): 1762-1774.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.161910 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I8/1762

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