用于精确预测SiC MOSFET开关特性的分析模型

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (3011 KB)
输出: BibTeX | EndNote (RIS)

摘要

为精确估算高频工作状态下SiC MOSFET的开关损耗及分析寄生参数对其开关特性的影响,提出了一种基于SiC MOSFET的精准分析模型。该模型考虑了寄生电感、SiC MOSFET非线性结电容及非线性跨导系数等参数。详细介绍了建立分析模型的原理,并给出了分析模型中各关键参数的提取方法。对比了基于分析模型计算得到的开关波形与实验测试结果,对比电压电流波形匹配度较高,证明了此分析模型的正确性。对比了分析模型的开关损耗与基于实验计算的开关损耗,对比结果显示两者存在偏差,而分析表明基于实验计算开关损耗的方法为不准确方法。最后基于所提出的分析模型分析了不同寄生参数对开关特性的影响,并为优化高频电路设计提出了建议。

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	梁美
	郑琼林
	李艳
	巴腾飞

关键词 ：分析模型, 碳化硅 MOSFET, 寄生参数, 开关特性, 开关损耗

Abstract：

This paper derives an analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFET.This analytical model involves the parasitic inductances,the nonlinearity of the junction capacitances and the nonlinearity of the transconductance and so on.The basis principle of establishing analytical model is illustrated in detail and the extraction of the key parameters is given.The analytical model of SiC MOSFET is successfully validated by experimental results.We did the analysis of the switching loss based on experimental results is imprecise.Finally,the effects of parasitic elements on the switching performance of SiC MOSFET are accounted and the circuit design rules of high frequency circuit are given.

Key words： Analytical model SiC MOSFET parasitic elements switching performance switching loss

收稿日期: 2015-07-14 出版日期: 2017-01-19

PACS:

TM133

通讯作者: 梁美女,1988年生,博士研究生,研究方向为电力电子与电力传动与新型宽禁带器件的应用。 E-mail:12117352@bjtu.edu.cn

作者简介: 郑琼林男,1964年生,教授,博士生导师,研究方向为牵引供电与交流传动技术、低损耗功率变流系统、电力系统中的电力电子技术、电力有源滤波与电能质量控制等。 E-mail:qlzheng@bjtu.edu.cn

引用本文:

梁美, 郑琼林, 李艳, 巴腾飞. 用于精确预测SiC MOSFET开关特性的分析模型[J]. 电工技术学报, 2017, 32(1): 148-158. Liang Mei,Zheng Qionglin,Li Yan,Ba Tengfei. Analytical Model of SiC MOSFET for Accurately Predicting the Switching Performance. Transactions of China Electrotechnical Society, 2017, 32(1): 148-158.

链接本文:

https://dgjsxb.ces-transaction.com/CN/Y2017/V32/I1/148

[1] Ning P,Wang F,Ngo K D.High-temperature SiC power module electrical evaluation procedure[J].IEEE Transactions on Power Electronics,2011,26(11):3079-3083.
[2] Josifovic I,Popovic-Gerber J,Ferreira J A.Improving SiC JFET switching behavior under influence of circuit parasitics[J].IEEE Transactions on Power Electronics,2012,27 (8):3843-3854.
[3] 祁锋,徐隆亚,王江波,等.一种为碳化硅 MOSFET 设计的高温驱动电路[J].电工技术学报,2015,30(23):24-31.
Qi Feng,Xu Longya,Wang Jiangbo,et al.A high temperature gate drive circuit for SiC MOSFET[J].Transactions of China Electrotechnical Society,2015,30(23):24-31.
[4] 陈思哲,盛况.4700V 碳化硅 PiN 整流二极管[J].电工技术学报,2015,30(22):57-61.
Chen Sizhe,Sheng Kuang.4700V SiC PiN rectifier[J].Transactions of China Electrotechnical Society,2015,30(22):57-61.
[5] 任小永,David Reusch,季澍,等.氮化镓功率晶体管三电平驱动技术[J].电工技术学报,2013,28(5):202-107.
Ren Xiaoyong,David Reusch,Ji Shu,et al.Three level driving method for GaN power transistor[J].Transactions of China Electrotechnical Society,2013,28(5):202-107.
[6] 梁美,郑琼林,可翀,等.SiC MOSFET,Si CoolMOS 和 IGBT 的特性对比及其在 DAB 变换器中的应用[J].电工技术学报,2015,30(12):41-50.
Liang Mei,Zheng Q Trillion,Ke Chong,et al.Performance comparison of SiC MOSFET,Si CoolMOS and IGBT for DAB converter[J].Transactions of China Electrotechnical Society,2015,30(12):41-50.
[7] Kadavelugu A,Baek S,Dutta S,et al.High-frequency design considerations of dual active bridge 1200 V SiC MOSFET dc-dc converter[C]//Applied Power Electronics Conference and Exposition,2011:314-320.
[8] Wang Y,De Haan S W H,Ferreira J A.Potential of improving PWM converter power density with advanced components[C]//European Conference on Power Electronics and Applications,2009:1-10.
[9] Chen Z,Boroyevich D,Burgos R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//Power Electronics Conference,2010:164-169.
[10]Li H,Munk-Nielsen S.Detail study of SiC MOSFET switching characteristics[C]//2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG),2014:1-5.
[11]Zhang Zheyu,Guo Ben,Wang Fred,et al.Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration[C]//Applied Power Electronics Conference and Exposition,2014:2534-2541.
[12]Fu R,Grekov A,Peng K,et al.Parasitic modeling for accurate inductive switching simulation of converters using SiC devices[C]//Energy Conversion Congress and Exposition,2013:1259-1265.
[13]Baliga B J.Fundamentals of Power Semiconductor Devices[M].Berlin:Springer,2008.
[14]Wang J,Chung H S,Li R T.Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance[J].IEEE Transactions on Power Electronics,2013,28(1):573-590.
[15]Ren Yuancheng,Xu Ming,Zhou Jinghai,et al.Analytical loss model of power MOSFET[J].IEEE Transactions on Power Electronics,2006,21(2):310-319.
[16]Rodriíguez M,Rodriguez A,Miaja P F,et al.An insight into the switching process of power MOSFETs:an improved analytical losses model[J].IEEE Transactions on Power Electronics,2010,25(6):1626-1640.
[17]Ho C N,Canales F,Coccia A,et al.A circuit-level analytical study on switching behaviors of SiC diode at basic cell for power converters[C]//Industry Applications Society Annual Meeting,2008:1-8.
[18]Chen Kainan,Zhao Zhengming,Yuan Liqiang,et al.The impact of nonlinear junction capacitance on switching transient and its modeling for SiC MOSFET[J].IEEE Transactions on Electron Devices,2015,62(2):333-338.
[19]Huang Xiucheng,Li Qiang,Liu Zhengyang,et al.Analytical loss model of high voltage GaN HEMT in cascode configuration[J].IEEE Transactions on Power Electronics,2015,29(5):2208-2219.
[20]Costinett D,Maksimovic D,Zane R.Circuit-oriented treatment of nonlinear capacitances in switched-mode power supplies[J].IEEE Transactions on Power Electronics,2014,30(2):985-995.
[21]Liu Z,Huang X,Lee F C,et al.Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT[J].IEEE Transactions on Power Electronics,2014,29(4):1977-1985.