SiC MOSFET短路保护技术综述

doi:10.19595/j.cnki.1000-6753.tces.211119

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Abstract With the development of power electronics technology, SiC MOSFETs show significant advantages in power electronics applications of high frequency, high voltage and high temperature due to its excellent material properties. However, the high switching speed and poor short-circuit withstand capability of SiC MOSFETs bring new challenges to short-circuit protection technology. In this paper, different short-circuit fault types and testing methods of SiC MOSFETs are introduced firstly. Secondly, the short-circuit failure mode and mechanism of SiC MOSFET are analyzed. On this basis, the principle, advantages and disadvantages of the existing short-circuit detection and turn-off technology of SiC MOSFETs are summarized in detail, and the problems and challenges in the application of the current short-circuit protection technology of SiC MOSFETs are discussed. Finally, the development trend of SiC MOSFET short-circuit protection technology is prospected.

Key words： SiC MOSFET short-circuit test short-circuit failure short-circuit protection

Received: 21 July 2021

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	Articles by authors
	Wen Yang
	Yang Yuan
	Ning Hongying
	Zhang Yu
	Gao Yong

Cite this article:

Wen Yang,Yang Yuan,Ning Hongying等. Review on Short-Circuit Protection Technology of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2538-2548.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.211119 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I10/2538

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