寄生参数对SiC MOSFET栅源极电压影响的研究

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Abstract In order to analyze the effect of parasitic parameters on the gate-source voltage of SiC MOSFET in the switching transient process,the model of SiC MOSFET turn-on and turn-off process is established based on the synchronous Buck converter in this paper.The effect of parasitic parameters is verified through comparing the experimental measurements with the simulation results,and is also analyzed in this paper.

Key words： SiC MOSFET parasitic parameters switching model gate-source voltage

Received: 07 April 2015 Published: 15 July 2016

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TM85

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	Ba Tengfei
	Li Yan
	Liang Mei

Cite this article:

Ba Tengfei,Li Yan,Liang Mei. The Effect of Parasitic Parameters on Gate-Source Voltage of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2016, 31(13): 64-73.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2016/V31/I13/64

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