4 700V碳化硅PiN整流二极管

Abstract
Figure/Table
References
Related Citation (0)

Download: PDF (9292 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract SiC PiN diode is known as an ideal high voltage rectifier in power electronics. Base on extensive numerical simulations on epi-layer parameters and termination structures, an optimized device design is put forward. With a 50μm thick drift layer and 1.5×10¹⁵cm^-3 N-type doping concentration, the fabricated PiN rectifier presents a high blocking voltage of 4 700V with both low leakage current and superior conduction capability. At the current conduction density of 100A/cm², the minimum on-state voltage of fabricated device is 3.6V.

Key words： 4H-SiC PiN rectifier termination structure minority carrier injection

Received: 11 November 2013 Published: 30 November 2015

PACS:

TN311

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Chen Sizhe
	Sheng Kuang

Cite this article:

Chen Sizhe,Sheng Kuang. 4 700V SiC PiN Rectifier[J]. Transactions of China Electrotechnical Society, 2015, 30(22): 57-61.

URL:

https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2015/V30/I22/57

[1] Cooper J A, Agarwal A. SiC power-switching devices- the second electronics revolution[J]. Proceedings of IEEE, 2002, 90(6): 956-968.
[2] 钱照明, 张军明, 吕征宇, 等. 我国电力电子与电力传动面临的挑战与机遇[J]. 电工技术学报, 2004, 19(8): 10-22.
Qian Zhaoming, Zhang Junming, Lü Zhengyu, et al. Challenge and opportunity for power electronics and electrical drive in China[J]. Transactions of China Electrotechnical society, 2004, 19(8): 10-22.
[3] 盛况, 郭清, 张军明, 等. 碳化硅电力电子器件在电力系统的应用展望[J]. 中国电机工程学报, 2012, 32(30): 1-7.
Sheng Kuang, Guo Qing, Zhang Junming, et al. Development and prospect of SiC power devices in power grid[J]. Proceedings of the CSEE, 2012, 32(30): 1-7.
[4] 徐殿国, 李向荣. 极限温度下的电力电子技术[J]. 电工技术学报, 2006, 21(3): 15-23.
Xu Dianguo, Li Xiangrong. Power electronics in extreme temperature applications[J]. Transactions of China Electrotechnical Society, 2006, 21(3): 15-23.
[5] Niwa H, Feng G, Suda J, et al. Breakdown characteristics of 12-20kV class 4H-SiC PiN diodes with improved junction termination structures[C]. 24th International Symposium on Power Semiconductor Devices and ICs, 2012: 381-384.
[6] Das M K, Hull B A, Richmond J T, et al. Ultra high power 10kV 50A SiC PiN diodes[C]. 17th Inter-
national Symposium on Power Semiconductor Devices and ICs, 2005: 159-162.
[7] Sundaresana S, Sturdevant C, Marripelly M, et al. 12.9kV SiC PiN diodes with low on-state drops and high carrier lifetimes[J]. Materials Science Forum, 2011: 949-952.
[8] Hull B A, Das M K, Richmond J T, et al. A 180amp/
4.5kV 4H-SiC PiN diode for high current power modules[C]. 18th International Symposium on Power Semiconductor Devices and ICs, 2006: 1-4.
[9] 黄润华, 李理, 陶永洪, 等. 4 500V碳化硅肖特基二极管研究[J]. 固体电子学研究与进展, 2013, 33(3): 220-223.
Huang Runhua, Li Li, Tao Yonghong. Research of 4.5kV SiC JBS diode[J]. Research and Progress of SEE, 2013, 33(3): 220-223.
[10] 张发生, 陈育林. 对拥有结终端保护的高压4H-SiC PIN二极管的研究[J]. 固体电子学研究与进展, 2012, 32(3): 225-228.
Zhang Fasheng, Chen Yulin. Study on high voltage 4H-SiC PIN diode with junction termination pro-
11 tections[J]. Research and Progress of SEE, 2012, 32(3): 225-228.
[11] Baliga B J. Fundamentals of power semiconductor devices[M]. New York: Springer Science and Business Media, 2008.
[12] Loh W S, Ng B K, Ng J S, et al. Impact ionization coefficients in 4H-SiC[J]. IEEE Transactions on Electronic Devices, 2008, 55(8): 1984-1990.
[13] Xiao G, Lee J, Liou J J, et al. Incomplete ionization in a semiconductor and its implications to device modeling[J]. Microelectronics and Reliability, 1999, 39(8): 1299-1303.