高温下的IGBT可靠性与在线评估

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Abstract Insulated gate bipolar transistor( IGBT ) will fail under the repeated thermal stress, and even the whole device will be burnt in serious condition. At present, the analysis methods of IGBT reliability mainly include testing, lifetime prediction and reliability assessment, whereas it is difficult to estimate the long-term reliability of IGBT device online. The failure mechanism, induced by the decline of IGBT reliability, and three main analysis methods for IGBT reliability are analyzed. The difficulty of monitoring the steady state thermal resistance between the junction and case to realize the online reliability assessment is pointed out. The IGBT modules are tested under the power cycling testing of high temperature, and the processes of temperature variation and bond wire lifting are detected through the high-speed infrared thermograph. In this way, the electrical and thermal characters are monitored. It is discovered that the main failure modes are bond wire falling off and meeting under high junction temperature and temperature gradient, whose outer character presents the increase of voltage drop, but the thermal resistance remains steady. An available method of online reliability assessment is proposed through monitoring the variation of voltage drop. This method with convenient manipulation and high precision is of great importance for the long-term reliable application of IGBT and the whole device.

Key words： IGBT high temperature reliability on-line evaluation power cycling test

Received: 27 September 2012 Published: 05 November 2014

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TN 322

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	Tang Yong
	Wang Bo
	Chen Ming
	Liu Binli

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Tang Yong,Wang Bo,Chen Ming等. Reliability and On-Line Evaluation of IGBT Modules Under High Temperature[J]. Transactions of China Electrotechnical Society, 2014, 29(6): 17-23.

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http://dgjsxb.ces-transaction.com/EN/ OR http://dgjsxb.ces-transaction.com/EN/Y2014/V29/I6/17

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