基于杂散参数辨识的IGBT模块内部缺陷诊断方法

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Abstract In order to identify the early internal defects inside IGBTs and enhance the reliability level of IGBTs during running, a novel prognostic method for internal defects of IGBTs based on stray parameters identification is presented in this paper with principle and characteristic. This method employs the least square method to detect variations of stray parameters inside IGBTs as aging resulted by electrical and thermal stress, Comparing to traditional fault diagnosis, this method can provide enough time to avoid abrupt failures and damages to equipment. The correctness and application value are verified by test results.

Key words： IGBT module reliability defects parameter identification

Received: 21 December 2011 Published: 20 March 2014

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TM464

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	Articles by authors
	Zhou Luowei
	Zhou Shengqi
	Sun Pengju

Cite this article:

Zhou Luowei,Zhou Shengqi,Sun Pengju. Diagnostic Method for Internal Defects of IGBTs Base on Stray Parameter Identification[J]. Transactions of China Electrotechnical Society, 2012, 27(5): 156-163.

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http://dgjsxb.ces-transaction.com/EN/ OR http://dgjsxb.ces-transaction.com/EN/Y2012/V27/I5/156

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