一种基于di<sub>C</sub>/dt反馈控制的大功率IGBT驱动保护方法

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Abstract This paper presents a new active gate driver protection method for high-power IGBTs.In the normal IGBT turn-on and turn-off process,by using di_C/dt feedback control,a soft turn-on and turn-off circuit is proposed,which effectively shortens the turn-on and turn-off time,increases the IGBT switching frequency,and reduces the power loss of the device.When IGBT has a short circuit,combining with the suggested di_C/dt feedback technology,an improved active clamping protection circuit is realized which implements the soft turn-off of the IGBT,prevents large voltage overshoot at the turn-off time to damage IGBT,and also effectively reduces the gate trigger resistance R_g loss.With Saber simulation software and high-power IGBT module YMIF1200-33 experimental platform,the feasibility of the program was verified.The results shows that under the normal circumstances,comparing to the traditional control scheme,this design scheme shortens the turn-on time by 26.5% and turn-off time by 52.6%.While under the short-circuit conditions,comparing to the traditional active clamp method,the improved scheme can effectively control V_CE,reduce the current of the internal gate resistance to 35.4% of the original value during the turn-off time,and reliably shut off the IGBT at the first time.

Key words： IGBT modules driver protection switching loss soft turn-off

Received: 15 November 2014 Published: 13 April 2015

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	Articles by authors
	Ning Hongying
	Sun Xuxia
	Yang Yuan

Cite this article:

Ning Hongying,Sun Xuxia,Yang Yuan. A High-power IGBT Drive Protection Method Based on di_C/dt Feedback Control[J]. Transactions of China Electrotechnical Society, 2015, 30(5): 33-41.

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http://dgjsxb.ces-transaction.com/EN/ OR http://dgjsxb.ces-transaction.com/EN/Y2015/V30/I5/33

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