添加物Bi对AgSnO<sub>2</sub>触头材料的影响

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摘要 AgSnO₂是最有可能替代AgCdO的新型材料, 在其制备方法中, 合金内氧化法是主要方法之一。但在制备过程中合金粉末氧化速度较慢且不能完全内氧化, 添加金属元素促进合金内氧化是一个重要研究方向。本文将Bi与Ag、Sn粉经机械合金化得到AgSnBi合金粉末, 将合金粉末压制成型、烧结、致密化加工后置于电阻炉中在大气气氛中进行粉末内氧化。采用内氧化物增重法分析Bi对AgSn合金内氧化性能的影响。利用PhilipsXL30W/TMP型扫描电镜观察试样AgSnO₂-Bi₂O₃的显微组织及形貌, 并用其能谱仪进行微区成分分析。研究结果表明Bi元素大大地提高了AgSn合金的内氧化速度, 并且氧化得到的AgSnO₂-Bi₂O₃材料组织致密。

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	王景芹
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	赵军

关键词 ： AgSnO, 触头材料, 内氧化, 显微组织

Abstract：AgSnO₂ is a kind of new contact materials which can instead of AgCdO, and the internal oxidation of the alloy is one of main methods to produce it. In the production of AgSnO₂, the internal oxidation of alloy powders is incomplete and at a low speed, and researching on the addition of metal elements to promote internal oxidation is important. In the present paper, the elements Bi are alloyed with Ag and Sn, and the AgSnBi alloy powders are produced by mechanical alloying. After suppression of molding, sintering, densification process, alloy powder is placed in the resistance furnace and the internal oxidation is carried out at atmospheric atmosphere. The method to measure the increase of the internal oxidation things is used to analyze the infection on the internal oxidation of Bi to AgSn. The analysis about microstructure and feature of AgSnO₂-Bi₂O₃ is made through PhilipsXL30W/TMP and the analysis about micro-area analysis is made through energy spectrometer. The results show that the oxidation rate of AgSn alloy is speeded up by Bi element significantly and the organization of the material AgSnO₂-Bi₂O₃ is dense.

Key words： AgSnO contact materials internal oxidation microstructure

收稿日期: 2010-02-20 出版日期: 2014-03-07

PACS:

TM501+.3

基金资助:河北省自然科学基金资助项目(E2009000063)

作者简介: 王景芹女, 1964年生, 博士, 教授, 博士生导师, 从事电器可靠性及电接触方面的教学及科研工作。朱艳彩女, 1980年生, 博士研究生, 专业方向为电器可靠性与测试技术。

引用本文:

王景芹, 朱艳彩, 王海涛, 赵军. 添加物Bi对AgSnO₂触头材料的影响[J]. 电工技术学报, 2011, 26(1): 29-33. Wang Jingqin, Zhu Yancai, Wang Haitao, Zhao Jun. Impact of Additives Bi on AgSnO₂ Contact Material. Transactions of China Electrotechnical Society, 2011, 26(1): 29-33.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2011/V26/I1/29

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