Bi对AgSnO<sub>2</sub>触头材料接触电阻的影响

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摘要 AgSnO₂是最有可能替代AgCdO的触头材料,但AgSnO₂在使用过程中存在接触电阻过高的缺陷。如何降低AgSnO₂的接触电阻是本文重点讨论的问题。首先利用粉末冶金法制备AgSnO₂Bi₂O₃和AgSnO₂两种触头材料,并对两种触头材料进行了电弧实验,通过扫描电镜对触头材料电弧侵蚀后的形貌进行了观察和分析。然后,通过润湿性实验,测量了AgSnO₂和AgSnO₂Bi₂O₃两种触头材料的润湿角。结果发现,Bi元素的加入改善了Ag液对SnO₂的浸润性,使润湿角减小,从而使AgSnO₂Bi₂O₃经电弧侵蚀后表面形成河流状组织,避免了SnO₂富集在触头表面形成绝缘层。最后,通过电性能实验验证了AgSnO₂Bi₂O₃的接触电阻小于AgSnO₂的接触电阻。通过以上实验证明,Bi元素的加入达到了降低AgSnO₂触头材料接触电阻的目的。

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	王海涛
	王景芹
	朱艳彩

关键词 ： AgSnO2, 润湿性, AgSnO2Bi2O3, 接触电阻

Abstract：AgSnO₂ is the most likely contact material to replace of AgCdO contact material. But AgSnO₂ exists defect of high contact resistance in the process of use. How to reduce the contact resistance of AgSnO₂ is the key issues in the paper. Firstly, AgSnO₂ and AgSnO₂Bi₂O₃ contact materials are prepared by powder metallurgy. Arc tests are carried on the two kinds of contact materials. The structure and shape on arc-melted surface of AgSnO₂Bi₂O₃ and AgSnO₂ are observed and analyzed by scanning electron microscopy. Then, by wetting test, the wetting angle of AgSnO₂Bi₂O₃ and AgSnO₂ are measured. The results show that the wettability of liquid Ag on the SnO₂ is improved by adding Bi elements. And the wetting angle decreased. So, river-like tissue formed on the surface of AgSnO₂Bi₂O₃ after arc erosion. The SnO₂ is avoided concentration to forms insulating layer on contact surface. Finally, it is verified that the AgSnO₂Bi₂O₃ contact resistance is smaller than that of AgSnO₂ by electrical property tests. Through the tests, it is proved that the AgSnO₂ contact resistance is reduced by adding Bi.

Key words： AgSnO2 wettability AgSnO2Bi2O3 contact resistance

收稿日期: 2013-10-14 出版日期: 2014-11-05

PACS:	TM501
	TG668

基金资助:河北省自然科学基金资助项目（E2009000063）

作者简介: 王海涛女 1973年生,博士,副教授,从事电器可靠性与检测技术,电接触方面的研究。王景芹女 1964年生,教授,博士生导师,从事电器可靠性与检测技术,电接触方面的研究。

引用本文:

王海涛, 王景芹, 朱艳彩. Bi对AgSnO₂触头材料接触电阻的影响[J]. 电工技术学报, 2014, 29(5): 265-270. Wang Haitao, Wang Jingqin, Zhu Yancai. Influence of Bi to AgSnO₂ Material’s Contact Resistance. Transactions of China Electrotechnical Society, 2014, 29(5): 265-270.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2014/V29/I5/265

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