Abstract：A buried-oxide trench-gate bipolar-mode power JFET (BTB-JFET) facing to low voltage and high frequency switching application is presented. Power loss comparison at high frequency among 20V-rated power switching devices, including BTB-JFET, conventional trench-gate bipolar-mode JFET (TB-JFET) and trench-gate MOSFET (T-MOSFET), is carried out by means of simulation based on static analysis and mixed-mode analysis using an inductive switching circuit for the first time. Simulation results show that the gate-drain capacitance CGD of normally-on BTB-JFET has an improvement up to 25% than that of TB-JFET at zero source-drain bias. Normally-on TB-JFET has at least 14% total power loss improvement at 1MHz and 19% at 2MHz compared to that of the T-MOSFET, while normally-on BTB-JFET can provide 6% more improvement at 1 and 2MHz compared to that of the TB-JFET. Simulation results also show that the normally-off JFET always perform worse than the T-MOSFET at different frequencies. The measurement results of samples still under fabrication show that the CGD of normally-on BTB-JFET has an improvement up to 45% than that of TB-JFET at zero source-drain bias, which accords with simulation.
田波, 吴郁, 黄淮, 胡冬青, 亢宝位. 面向低压高频开关应用的功率JFET的功耗[J]. 电工技术学报, 2009, 24(8): 106-110.
Tian Bo, Wu Yu, Huang Huai, Hu Dongqing, Kang Baowei. Power Loss of Power JFET Facing to Low Voltage and High Frequency Switching Application. Transactions of China Electrotechnical Society, 2009, 24(8): 106-110.
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2009, Vol. 24 
