Abstract：In order to identify the early internal defects inside IGBTs and enhance the reliability level of IGBTs during running, a novel prognostic method for internal defects of IGBTs based on stray parameters identification is presented in this paper with principle and characteristic. This method employs the least square method to detect variations of stray parameters inside IGBTs as aging resulted by electrical and thermal stress, Comparing to traditional fault diagnosis, this method can provide enough time to avoid abrupt failures and damages to equipment. The correctness and application value are verified by test results.
周雒维, 周生奇, 孙鹏菊. 基于杂散参数辨识的IGBT模块内部缺陷诊断方法[J]. 电工技术学报, 2012, 27(5): 156-163.
Zhou Luowei, Zhou Shengqi, Sun Pengju. Diagnostic Method for Internal Defects of IGBTs Base on Stray Parameter Identification. Transactions of China Electrotechnical Society, 2012, 27(5): 156-163.
[1] 王兆安, 黄俊. 电力电子技术[M]. 北京: 机械工业出版社. 2000. [2] Bernet S. Recent developments of high power converters for industry and traction applications[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1102-1117. [3] Arai J, Iba K, Funabashi T, et al. Power electronics and its applications to renewable energy in Japan[J]. IEEE Circuits and Systems Magazine, 2008, 8(3): 52-66. [4] Chen Z, Guerrero J M, Blaabjerg F. A review of the state of the art of power electronics for wind turbines[J]. IEEE Transactions on Power Electronics, 2009, 24(8): 1859-1875. [5] 马伟明. 电力电子在舰船电力系统中的典型应用[J]. 电工技术学报, 2011, 26(5): 1-7. [6] Yang S, Bryant A, Mawby P, et al. An industry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451. [7] Mitic G, Beinert R, Klofac P, et al. Reliability of AlN substrates and their solder joints in IGBT power modules[J]. Microelectronics Reliability, 1999, 39(6): 1159-1164. [8] Lefranc G, Licht T, Schultz H J, et al. Reliability testing of high-power multi-chip IGBT modules[J]. Microelectronics Reliability, 2000, 40(8-10): 1659-1663. [9] Onuki J, Koizumi M, Suwa M. Reliability of thick Al wire bonds in IGBT modules for traction motor drives[J]. IEEE Transactions on Advanced Packaging, 2000, 23(1): 108-112. [10] Ciappa M. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 42(4-5): 653-667. [11] 赵争鸣, 张海涛, 袁立强. 基于IGCT的高压三电平变频器失效机理及保护策略[J]. 电工技术学报, 2006, 21(5): 1-6, 18. [12] 赵争鸣, 白华, 袁立强. 电力电子学中的脉冲功率瞬态过程及其序列[J]. 中国科学(E辑: 技术科学), 2007, 37(1): 60-69. [13] Bouarroudj M, Khatir Z, Ousten J P, et al. Temperature-level effect on solder lifetime during thermal cycling of power modules[J]. IEEE Transactions on Device and Materials Reliability, 2008, 8(3): 471-477. [14] Xiong Y L, Cheng X, Shen Z J, et al. Prognostic and warning system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles[J]. IEEE Transactions on Industrial Electronics, 2008, 55(6): 2268-2276. [15] Patil N, Celaya J, Das D, et al. Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics[J]. IEEE Transactions on Reliability, 2009, 58(2): 271-276. [16] Musallam M, Johnson C M. Real-time compact thermal models for health management of power electronics[J]. IEEE Transactions on Power Electronics, 2010, 25(6): 1416-1425. [17] 马伟明, 胡安, 王令蓉. 基于电压波形分析的十二相整流装置故障诊断[J]. 电工技术学报, 1997, 12(6): 49-54. [18] 马皓, 徐德鸿, 卞敬明. 基于神经网络和频谱分析的电力电子电路故障在线诊断[J]. 浙江大学学报(工学版), 1999, 33(6): 664-668. [19] 徐德鸿, 马皓. 电力电子装置故障自动诊断[M]. 北京: 科学出版社 2001. [20] 张志学, 马皓, 毛兴云. 基于混杂系统模型和事件辨识的电力电子电路故障诊断[J]. 中国电机工程学报, 2005, 25(3): 49-53. [21] 胡清, 王荣杰, 詹宜巨. 基于支持向量机的电力电子电路故障诊断技术[J]. 中国电机工程学报, 2008, 28(12): 107-111. [22] Bin L, Sharma S K. A literature review of IGBT fault diagnostic and protection methods for power inverters[J]. IEEE Transactions on Industry Applica- tions, 2009, 45(5): 1770-1777. [23] Yu C, Yuan J S, Yang H. MOSFET linearity performance degradation subject to drain and gate voltage stress[J]. IEEE Transactions on Device and Materials Reliability, 2004, 4(4): 681-689. [24] Tang M C, Fang Y K, Liao W S, et al. Investigation and modeling of hot carrier effects on performance of 45- and 55-nm NMOSFETs with RF automatic measurement[J]. IEEE Transactions on Electron Devices, 2008, 55(6): 1541-1546. [25] Sheng W W, Colino R P. Power electronic modules: design and manufacture[M]. Boca Raton: CRC Press 2005. [26] Khanna V K. The insulated gate bipolar transistor: IGBT theory and design[M]. Piscataway, N J: IEEE Press, 2003. [27] Xing K, Lee F C, Boroyevich D. Extraction of parasitics within wire-bond IGBT modules[C]. Thirteath Annual Applied Power Electronics Conference and Exposition, Anaheim, 1998: 497-520. [28] Hefner A R, Diebolt D M. An experimentally verified IGBT model implemented in saber circuit simulator[J]. IEEE Transactions on Power Electronics, 1994, 9(5): 532-542. [29] 唐勇, 胡安, 陈明. IGBT栅极特性与参数提取[J]. 电工技术学报, 2009, 24(7): 76-80. [30] Mohan N, Undeland T M, Robbins W P. Power electronics: converters, applications, and design[M]. 3rd ed. New York: Wiley, 2003.
2012, Vol. 27 
