Abstract：Temperature of insulated gate bipolar transistor (IGBT) modules is a main influence factor of reliability, which is very difficult to measure. In order to solve this problem, interior heat conduction mechanism is analyzed. Then thermal network model of IGBT modules is constructed by employing lumped parameters method of instantaneous unsteady heat conduction. Parameters extraction methods of equivalent thermal resistance, equivalent thermal capacitance and heat losses are preferred. The paper gives experimental and simulated temperature curves, which datum from thermal network model, technical documents, base-plate measurement and finite element model. Result show that thermal network model is validated.
魏克新, 杜明星. 基于集总参数法的IGBT模块温度预测模型[J]. 电工技术学报, 2011, 26(12): 79-84.
Wei Kexin, Du Mingxing. Temperature Prediction Model of IGBT Modules Based on Lumped Parameters Method. Transactions of China Electrotechnical Society, 2011, 26(12): 79-84.
[1] Hamidi A, Beck N, Thomas K, et al. Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules[J]. Microelectronics Reliability, 1999, 39: 1153-1158. [2] Khatir Z, Lefebvre S. Boundary element analysis of thermal fatigue effects on high power IGBT modules[J]. Microelectronics Reliability, 2004, 44: 929-938. [3] Feller L, Hartmann S. Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150℃[J]. Microelectronics Reliability, 2008, 48:1161-1166. [4] 刘希真, 周文俊, 尤佳, 等. IGBT工作结温的状态识别[J]. 天津大学学报, 2002, 35(2): 243-246. Liu Xizhen, Zhou Wenjun, You Jia, et al. State identification of IGBT junction temperature on line[J]. Transactions of Tianjin University, 2002, 35(2): 243-246. [5] Barlini D, Ciappa M, Casellazzi A, et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions[J]. Microelectronics Reliability, 2006, 46: 1772-1777. [6] 戴锅生. 传热学[M]. 第2版. 北京：高等教育出版社, 1999. [7] Profumo F, Tenconi A, Facelli S, et al. Instantaneous junction temperature evaluation of high-power diodes (thyristors) during current transients[J]. IEEE Transactions on Power Electronics, 1999, 14(2): 292-299. [8] Ishiko M, Kondo T. A simple approach for dynamic junction temperature estimation of IGBTs on PWM operating conditions[C]. Proceedings of the 2007 IEEE Power Electronics Specialists Conference, Orlando, USA, 2007: 916-920. [9] Ayadi M, Abid S, Ammous A. Thermal simulations of multi-chips modules[C]. Proceedings of the 2005 12th IEEE International Conference on Electronics, Circuits and Systems, Columbus, USA, 2005: 1-4. [10] Bierhoff M H, Fuchs F W. Semiconductor losses in voltage source and current source IGBT converters based on analytical derivation[C]. Proceedings of the 35th Annual IEEE Power Electronics Specialists Conference, Adchen, Germany, 2004: 2836-2842. [11] Eberle W, Zhang Z L, Liu Y F, et al. A practical switching loss model for buck voltage regulators[J]. IEEE Transactions on Power Electronics, 2009, 24(3): 700-713. [12] Kharitonov S A, Petriv M A, Korobkov D V, et al. A principle of calculation dynamic and static power losses with hard-switching IGBT[C]. Proceedings of the 6th International Siberian Workshop and Tutorials on Electron Devices and Materials, Novosibirsk, Russia, 2005: 147-149. [13] Aarniovuori L, Laurila L, Niemela M, et al. Loss calculation of a frequency converter with a fixed-step circuit simulator[C]. Proceedings of the 2007 European Conference on Power Electronics and Applications, Aalborg, Denmark, 2007: 1-9.
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