Development of IGCT-Based Large Power Three-Level Dual-PWM Converter
Lan Zhiming1, 2, Li Chongjian3, Li yaohua1, Zhu Chunyi3, Wang Chengsheng3
1. China Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences Beijing 100190 China; 2. Graduate University of the Chinese Academy of Science Beijing 100080 China 3. Automation Research and Design Institute of Metallurgical Industry Beijing 100071 China
Abstract：In media and high voltage large power converter systems, the integrated gate commutated thyristor (IGCT) takes the place of gate turn off thyristor (GTO) due to its outstanding performance. And IGCT-based large power three-level converters are widely used in motor-driving field. In this paper, the development of a set of IGCT-based large power three-level dual-PWM converter is introduced. The PWM rectifier of the converter adopted close-loop control method and SVPWM algorithm to realize the balance of the neutral point voltage. The PWM inverter of the converter adopted SVPWM and SHEPWM modulation strategy. After the converter was developed the experiments were performed. The experiment results show that the converter reaches the design requirement and has excellent performance.
兰志明, 李崇坚, 李耀华, 朱春毅, 王成胜. 基于IGCT的大功率三电平双PWM变流器的研制[J]. 电工技术学报, 2011, 26(1增): 36-48.
Lan Zhiming, Li Chongjian, Li yaohua, Zhu Chunyi, Wang Chengsheng. Development of IGCT-Based Large Power Three-Level Dual-PWM Converter. Transactions of China Electrotechnical Society, 2011, 26(1增): 36-48.
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2011, Vol. 26 
