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| Design and Implementation of High-Voltage High-Speed Optically Controlled Pulses Thyristor |
| Wang Lingyun1,2, Liu Hongwei2, Yuan Jianqiang2, Xie Weiping2, Yan Jiasheng3 |
1. College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China;
2. Institute of Fluid Physics China Academy of Engineering Physics Mianyang 621900 China;
3. Hubei TECH Semiconductors Co. Ltd Xiangyang 441021 China |
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Abstract This paper compares and analyzes the characteristics of existing high-power semiconductor devices. Among semiconductor switches, thyristors have the highest power capacity but the slowest conduction speed. On the other hand, photoconductive semiconductor switches (PCSS) have the fastest switch conduction speed and have optoelectronic isolation, but their auxiliary systems are relatively large and difficult to achieve a wide pulse width. If the advantages of the two types of switches can be organically combined, it is expected to significantly improve the performance of solid-state semiconductor pulse switches. Combining the advantages of thyristors and photoconductive switches, we designed a high-voltage optically controlled pulse thyristor device. This device is different from the traditional light triggered thyristors (LTT) with milliwatt weak light triggering and multi-stage amplifying gate structure. The developed optically controlled pulse thyristor uses strong light short pulse triggering and carried out laser injection verification tests under conditions such as 1 000 W laser and 1 MW, and obtained preliminary verification experimental results. Experiments and simulation analysis found that the transverse expansion speed of photogenerated carriers is slow, which can easily induce the current concentration effect and cause device failure, and the conduction speed of the switch is also difficult to further improve. Based on this research, improvements and optimizations have been made. A large-area dispersed array gate structure is proposed, and technologies such as laser diode arrays and high-current pulse strong driving are used.
First, a 53 dot matrix laser diode array was designed, driven by an electrical pulse with a voltage of 300 V, a current of 200 A, and a pulse width of 200 ns, achieving a laser with an energy of 250 μJ, a wavelength of 905 nm, a pulse width of about 210 ns, and a peak power of about 1 200 W. At the same time, based on the traditional silicon-based μm-level process platform, a 23 mm switch chip was fabricated. The chip was designed into an array-style gate structure, which corresponds one-to-one with the 53 dot matrix structure, and the integration of the laser diode array and the switch was completed. Tests were conducted, and when the energy storage was 53 nF, the switch working voltage was 8.5 kV, the output current was 6 kA, the current rise time was 109.7 ns, the delay time jitter was ≤ 1 ns, and under the state with loop inductance, the measured di/dt was 55 kA/μs, and the peak power was 50 MW when turned on. Through this structure, an optically controlled pulse thyristor with high working voltage, high isolation voltage, and fast conduction speed characteristics was verified and realized.
The paper discusses two technical paths to improve the pulse performance of high-voltage high-speed optically controlled pulse thyristors. One is to increase the peak power of the drive injection, and the other is to improve the uniformity of the drive injection. The use of optically controlled array drive and array gate technology effectively solves the defects of electrically controlled thyristors, traditional optically controlled thyristors, and single-gate optically controlled pulse thyristors. This large-area optical power injection significantly improves the peak drive power, thereby enabling the switch to obtain large-area, high-power photogenerated carrier injection, achieving higher peak power and faster conduction speed for semiconductor switch devices. Due to the use of optoelectrical isolation and packaging, the control side of the switch is high-voltage isolated from the switch side, possessing a high-voltage isolation function that traditional thyristor switches do not have, and has good anti-interference performance.
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Received: 24 May 2024
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2024, Vol. 39 
