高压SiC器件HCT型隔离取能装置的耦合电容特性和抑制方法研究

doi:10.19595/j.cnki.1000-6753.tces.240021

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Abstract

High-voltage silicon carbide (SiC) switches are developing rapidly and draw increasing attention. The new generation of power conversion system based on high-voltage SiC switches has advantages of smaller number of devices, higher efficiency, smaller size, etc. Thus, high-voltage SiC devices have been gradually applied to medium-voltage motor drives, solid-state transformers, grid-connected inverters and other fields. However, the isolated power supplies for the driver circuit of SiC switches are facing high dv/dt challenges, which can easily cause strong common-mode interference and device failure.
High-frequency current transformer (HCT) is a novel method of isolated power transfer for high-voltage SiC devices. However, characteristics between its coupling capacitance and structural parameters are still unclear, complicating the improvement of dv/dt performance and the pursuit of miniaturization.
A 3D simulation model of HCT-type isolated power transfer structure is firstly constructed, and the structural parameters are extracted through finite element simulation to systematically study the influence of structural parameters (isolation distance, eccentric position, winding mode, number of turns, etc.) on the coupling capacitance. On this basis, an optimization method of the coupling capacitance of the HCT-type device under the influence of multiple parameters is proposed to achieve the minimum coupling capacitance. Finally, the effectiveness of the proposed method and the developed device is verified by experiments.
The results show that the coupling capacitance can be reduced by approximately 20% simply by adjusting the location of the penetration center of the HCT-type device. The coupling capacitance of the developed isolated power transfer device is only 0.74 pF, which is 55% and 70% lower than the conventional design and similar products, respectively. In addition, a high-voltage test platform is established, and the maximum voltage without any partial discharge of the developed device, up to 15.5 kV, is obtained through experimental tests. Finally, a prototype of the isolated power supply is built based on the proposed design, and the device was verified by experiments. Result showed that it could provide a stable energy supply to the 3.3 kV SiC devices at different frequencies. The research in this paper provides a new path of the isolated power for high-voltage SiC devices with high isolation, high interference immunity, and high compactness.

Key words： High-voltage SiC switch isolated power supply low coupling capacitance current transformer

Received: 04 January 2024

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	Pan Jianyu
	Tang Haibo
	Jiang Yi
	Fu Xiaojie
	Yan Sheng

Cite this article:

Pan Jianyu,Tang Haibo,Jiang Yi等. Study of Coupling Capacitance Characteristics and Its Suppression Method of HCT-Based Isolated Power Transfer Device for High-Voltage SiC Switches[J]. Transactions of China Electrotechnical Society, 0, (): 240021-240021.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.240021 OR https://dgjsxb.ces-transaction.com/EN/Y0/V/I/240021

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