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| Injuring Mechanism of Surface Flashover and Filamention to the Photoconductive Switch |
| Ma Xiangrong1, Shi Wei1, Xue Hong1, 2, Ji Weili1 |
| 1. Xi’an University of Technology Xi’an 710048 China 2. Weinan Teachers University Weinan 714000 China |
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Abstract Experimental research on semi-insulating (SI) GaAs photoconductive switches with electrode gap 3mm and 8mm found out that surface flashover and filamention are two main damaged mechanisms. Surface flashover is a phenomena that GaAs material takes on melting-recrystallization in the course of heat transfer under strong bias voltage, and it would lead to a fatal injury to switch. Because of negative differential conductivity (NDC) effect, high concentration of electron-hole plasma channel would form filamention under nonlinear mode; the chip is in photo-controlled pre-breakdown state. There are two kind of resumable and unresumable injures.
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Received: 20 April 2009
Published: 04 March 2014
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[1] 袁建强, 谢卫平, 周良骥, 等. 光导开关研究进展及其在脉冲功率技术中的应用[J]. 强激光与粒子束, 2008, 20(1): 171-176.
[2] Islam N E, Schamiloglu E, Fledderman C B. Characterization of semi-insulating CaAs photoconductive semiconductor switch for ultra-wide band high power microwave applications[J]. Appl. Phys. Lett., 1998, 73(14): 1988.
[3] 施卫, 田立强. 半绝缘GaAs光电导开关的击穿特性[J].半导体学报, 2004, 25(6): 691-696.
[4] Adams J C, Falk R A, Capps C D, et al. Characterization of current filamention in GaAs photocon- ductive semi-conductive switches[C]. SPIE, 1993, 1873: 10-20.
[5] Zhang Guanjun, Yan Zhang, Liu Yuanxing, et al. Pre-flashover and flashover phenomena of silicon- vacuum system under pulsed excitation[J]. Appl. Phys. Lett., 2002, 80(20): 3742-3744.
[6] 刘静. 微米/纳米尺度传热学[M]. 北京: 科学出版社, 2001.
[7] Lin T L, Park J S, George T, et al. Long-wavelength Pt-Si infrared detectors fabricated by incorporating a p+ doping spike grown by molecular beam epitaxy[J]. Appl. Phys. Lett., 1993, 62(25): 3318.
[8] 施卫, 赵卫, 张显斌. 用光激发开关产生高功率亚纳秒电脉冲的研究[J]. 强激光与粒子束, 2001, 13 (6): 734-738.
[9] 赵文彬, 张冠军, 严璋. 半导体闪络引起的材料表面破坏现象研究[J]. 物理学报, 2008, 57(8): 5130-5137.
[10] Gradinaru G, Madangarli V P, Sudarshan T S. Surface flashover in silicon vacuum systems[J]. IEEE Trans. on Electr. Insul., 1993, 28(4): 555-565.
[11] Nam S H, Sudarshan T S. New findings of pulsed surface breakdown along silicon in vacuum[J]. IEEE Trans. on Electron. Devices, 1990, 37 (12): 2466- 2471.
[12] Gradinaru G, Sudarshan T S. Prebreakdown and breakdown phenomena in high-field semiconductor dielectric systems[J]. J. Appl. Phys., 1993, 73(11): 7643-7666.
[13] Zutavern F J, Loubriel G M, Mclaughling D L, et al. Electrical and optical properties of high gain GaAs switches[J]. Proc. SPIE, 1992, 1632: 152-159.
[14] Zutavern F J, Loubriel G M, O’ Malley M W, et al. Characteristics of current filamentation in high gain photoconductive semiconductor switching[C]. IEEE Power Modulator Symposium, 1992: 305. |
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2010, Vol. 25 
