碳化硅功率模块封装技术综述

doi:10.19595/j.cnki.1000-6753.tces.221214

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Abstract

ilicon carbide devices, representative of wide-bandgap semiconductors, are of extremely excellent performance in theory and are promising to replace silicon IGBTs in high-power power electronic converters. They can greatly improve the efficiency and power density of the converters. However, at present, commercial silicon carbide power modules employ the packaging technology of silicon IGBT modules, which features large high-frequency parasitic inductance, insufficient heat dissipation capacity, low-temperature resistance, and insufficient dielectric strength. This limits the excellent performance of silicon carbide semiconductors. To address the issues and make full use ofthe advantages of silicon carbide chips, new packaging technologies and solutions for silicon carbide power modules have emerged in recent years. They focus on dealing with challenges of the electrical, thermal and insulation performancesof silicon carbide power modules.According tothe basic theoryof optimization methods, this paper classifies and summarizes various optimization techniques about reducing high-frequency parasitic inductance, enhancing heat dissipation performance, improving high-temperature resistance, and increasing dielectric strength. Then the related reliability issues are summarized. Finally, the future development of related technologies is prospected.

Key words： Silicon carbide power module parasitic inductance thermalperformance high-temperature performance insulation performance reliability

Received: 24 June 2022

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TN305

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	Wang Laili
	Zhao Cheng
	Zhang Tongyu
	YanFeifei

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Wang Laili,Zhao Cheng,Zhang Tongyu等. Review of Packaging and Integration Technology in Silicon Carbide Power modules[J]. Transactions of China Electrotechnical Society, 0, (): 230611-230611.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221214 OR https://dgjsxb.ces-transaction.com/EN/Y0/V/I/230611

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