多芯片并联IGBT模块老化特征参量甄选研究

doi:10.19595/j.cnki.1000-6753.tces.210792

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Abstract Multi-chips parallel Insulated Gate Bipolar Transistor (IGBT) is the key device of large-capacity power electronic equipment, and its operational reliability has been widely concerned by the industry. Selecting the characteristic parameter which can characterize the aging state of multi-chips parallel IGBT devices is very important for the active maintenance and improvement of reliability of the system. In this paper, the effects of solder layer aging and bond wire lift-off on the electro-thermal-magnetic characteristics of the Infineon's 1.7kV multi-chips parallel IGBT module are analyzed, and the magnetic flux density is proposed as the characteristic parameter for condition monitoring of the multi-chips parallel IGBT module fatigue failure. Firstly, the steady-state conduction equivalent circuit of multi-chips parallel IGBT module was established, and the coupling relationship between module degradation and magnetic flux density was qualitatively analyzed. Secondly, based on the three-dimensional electro-thermal-magnetic finite element model, the variation and sensitivity of electro-thermal-magnetic parameters of multi-chips parallel IGBT module during aging failure process were studied. Results show that the magnetic flux density has the highest sensitivity in both failure modes, and is not affected by the change of ambient temperature. In addition, direct contact with the module circuit can be avoided during the measurement, which has little impact on the normal operation of the module. Therefore, magnetic flux density is suitable to be used as the characteristic parameter for condition monitoring of multi-chips parallel power module.

Key words： Multi-chips parallel IGBT module magnetic flux density aging characteristic parameter condition monitoring

Received: 01 June 2021

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TM46

Fund:国家重点研发计划（2018YFB0905800）、中央高校基本科研业务费（2020CDJQY-A026）和国家自然科学基金（51707024）资助项目

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	Ding Xueni
	Chen Minyou
	Lai Wei
	Luo Dan
	Wei Yunhai

Cite this article:

Ding Xueni,Chen Minyou,Lai Wei等. Selection of Aging Characteristic Parameter for Multi-Chips Parallel IGBT Module[J]. Transactions of China Electrotechnical Society, 2022, 37(13): 3304-3316.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210792 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I13/3304

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