基于低高度平面电感的GaN-Si混合型图腾柱无桥功率因数校正器

doi:10.19595/j.cnki.1000-6753.tces.201428

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Abstract A GaN-Si hybrid totem-pole bridgeless PFC converter based on low profile planar inductor is presented in this paper. With the slow reverse recovery characteristics of the low frequency diode, a reverse current path is provided for high frequency GaN switching leg, so that the critical mode operation and the soft-switching can be achieved. In order to achieve lower height and higher power density, a low-profile planar inductor structure and an optimal design method are presented. The calculation method of inductor core loss and winding loss is presented by decomposing the inductor current in CRM mode, and the inductor dimension is optimized. Finally, a 200~700kHz, 400W PFC converter prototype is built to verify the feasibility and effectiveness of the presented scheme.

Key words： Totem-pole power factor corrector GaN planar inductor optimal design

Received: 28 October 2020

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TM46

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	Articles by authors
	Zou Jun
	Wu Hongfei
	Liu Yue
	Ge Zixian
	Yang Liu

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Zou Jun,Wu Hongfei,Liu Yue等. Hybrid Totem-Pole Bridgeless Power Factor Corrector Converter with GaN HEMT and Si Diode Based on Low Profile Planar Inductor[J]. Transactions of China Electrotechnical Society, 2021, 36(20): 4265-4273.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.201428 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I20/4265

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