基于GaN-HEMT器件的双有源桥DC-DC变换器的软开关分析

doi:10.19595/j.cnki.1000-6753.tces.L80714

Abstract
Figure/Table
References (0)
Related Citation (15)

Download: PDF (60748 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract

In this paper, we analyze the circuit model of soft-switching of dual active bridge based on GaN-HEMT device, and compare the soft-switching range of different transistors. First, we present the traditional phase modulation principle and derive the value of auxiliary inductor current. The circuit model of the full bridge is built and the parasitic output capacitance of MOSFET and GaN-HEMT are numerically fitted respectively. Furthermore, the ZVS switching time and the region of DAB under different working conditions are calculated and compared based on different transistors. Based on the characteristics of gallium nitride devices, the dead zone is optimized to reduce the switching current peak of the devices and the circuit loss. Finally, the inductor current and capacitance voltage is verified by Pspice software and the power characteristic curve is analyzed. The experimental of GaN-HEMT is built for verification.

Key words： Dual active bridge GaN-HEMT soft-switching deadtime

Received: 09 July 2018 Published: 02 January 2020

PACS:

TM46

Corresponding Authors: 国家自然科学基金重点资助项目（61733010）

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Liu Jiabin
	Xiao Xi
	Mei Hongwei

Cite this article:

Liu Jiabin,Xiao Xi,Mei Hongwei. Soft Switching Analysis of Dual Active Bridge DC-DC Converter Based on GaN-HEMT Device[J]. Transactions of China Electrotechnical Society, 2019, 34(zk2): 534-542.

URL:

https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L80714 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/Izk2/534

[1] Vazquez S, Lukic S M, Galvan E, et al.Energy storage systems for transport and grid applications[J]. IEEE Transactions on Industrial Electronics, 2011, 57(12): 3881-3895.
[2] Alex Q Huang, Mariesa L Crow, Gerald Thomas Heydt, et al.The future renewable electrical energy delivery and management (FREEDM) system: the energy internet[J]. Proceedings of the IEEE, 2011, 99: 133-148.
[3] Zhao Biao, Song Qiang, Liu Wenhua, et al.Overview of dual-active-bridge isolated bidirectional DC-DC converter for high-frequency-link power-conversion system[J]. IEEE Transactions on Power Electronics, 2014, 28(8): 4091-4106.
[4] 王聪, 沙广林, 王俊, 等. 基于双重移相控制的双有源桥DC-DC变换器的软开关[J]. 电工技术学报, 2015, 30(12): 106-113.
Wang Cong, Sha Guanglin, Wang Jun, et al.The analysis of zero voltage switching dual active bridge DC-DC converters based on dual-phase-shifting control[J]. Transactions of China Electrotechnical Society, 2015, 30(12): 106-113.
[5] 吴俊娟, 孟德越, 申彦峰, 等. 双重移相控制与传统移相控制相结合的双有源桥式DC-DC变换器优化控制策略[J]. 电工技术学报, 2016, 31(19): 97-105.
Wu Junjuan, Meng Deyue, Shen Yanfeng, et al.Optimal control strategy of dual active bridge DC-DC converter with combined dual-phase-shift and traditional- phase-shift controls[J]. Transactions of China Elec- trotechnical Society, 2016, 31(19): 97-105.
[6] Zhao Biao, Song Qiang, Liu Wenhua, et al.Characterization and application of next-generation SiC power devices for high-frequency isolated bidi- rectional DC-DC converter[C]//IECON 2012-38th Annual Conference on IEEE Industrial Electronics Society, Montreal, QC, 2012: 281-286.
[7] 朱梓悦, 秦海鸿, 董耀文, 等. 宽禁带半导体器件研究现状与展望[J]. 电气工程学报, 2016, 11(1): 1-11.
Zhu Ziyue, Qin Haihong, Dong Yaowen.Research on wide-bandgap power devices: current status and future forecasts[J]. Journal of Electrical Engineering, 2016, 11(1): 1-11.
[8] 闫琪, 李艳, 王路. 基于GaN器件的双Buck逆变器共模与损耗[J]. 电工技术学报, 2017, 32(20): 133-141.
Yan Qi, Li Yan, Wang Lu.The common-mode characteristics and loss of dual Buck grid-connected inverter based on GaN devices[J]. Transactions of China Electrotechnical Society, 2017, 32(20): 133-141.
[9] Xue Fei, Yu Ruiyang, Huang A Q.A 98.3% efficient GaN isolated bidirectional DC-DC converter for DC microgrid energy storage system applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(11): 9094-9103.
[10] Zhao Biao, Song Qiang, Liu Wenhua, et al.Dead- time effect of the high-frequency isolated bidire- ctional full-bridge DC-DC converter: comprehensive theoretical analysis and experimental verification[J]. IEEE Transactions on Power Electronics, 2014, 29(4): 1667-1680.
[11] Qin Zian, Shen Yanfeng, Loh P C, et al.A dual active bridge converter with an extended high-efficiency range by DC blocking capacitor voltage control[J]. IEEE Transactions on Power Electronics, 2018, 33(7): 5949-5966.
[12] Han Di, Sarlioglu B.Understanding the influence of dead-time on GaN based synchronous Boost con- verter[C]//2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, Knoxville, TN, 2014: 70-74.
[13] Han Di, Sarlioglu B.Deadtime effect on GaN-based synchronous Boost converter and analytical model for optimal deadtime selection[J]. IEEE Transactions on Power Electronics, 2016, 31(1): 601-612.