SiC MOSFET的Saber建模及其在光伏并网逆变器中的应用和分析

doi:10.19595/j.cnki.1000-6753.tces.181203

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Abstract The high frequency, high efficiency and high power density characteristics of SiC MOSFET meet the development trend of PV inverter. However, the switching oscillation that comes with it needs to be solved urgently. Due to the existence of switching oscillations, the quality of grid- connected current waveform may be reduced after the switching frequency is increased. Therefore, an accurate model is necessary to provide guidance for the application of SiC MOSFET in PV inverter. Most of the current SiC MOSFET models are built on the Pspice simulation environment and cannot be used for simulation studies involving complex circuit topologies and control algorithms. Based on the Saber environment, a model combining SiC MOSFET with PV inverter is proposed in this paper. The device characteristics of SiC MOSFET are obtained by double pulse experiments, and the static characteristics and nonlinear capacitance of SiC MOSFET are modeled. Finally, the model is applied to PV grid-connected inverter, and the simulation results are compared with the measured results of the photovoltaic grid connected inverter test bench. The performance of the SiC PV grid-connected inverter under different switching frequencies is analyzed, which verifies the accuracy and applicability of the model.

Key words： Modeling of SiC MOSFET switching oscillations high frequency SiC PV grid- connected inverter

Received: 11 July 2018 Published: 30 October 2019

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TM464

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	Zhou Lin
	Li Hanjiang
	Xie Bao
	Li Haixiao
	Nie Li

Cite this article:

Zhou Lin,Li Hanjiang,Xie Bao等. Saber Modeling of SiC MOSFET and Its Application and Analysis in Photovoltaic Grid-Connected Inverter[J]. Transactions of China Electrotechnical Society, 2019, 34(20): 4251-4263.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.181203 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I20/4251

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