Transactions of China Electrotechnical Society  2019, Vol. 34 Issue (16): 3366-3372    DOI: 10.19595/j.cnki.1000-6753.tces.L80103
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A High Frequency High Voltage Gain Modified Sepic Converter
Gao Shanshan, Wang Yijie, Xu Dianguo
Department of Electrical Engineering Harbin Institute of Technology Harbin 150001 China

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Abstract  With the demand of high voltage gain characteristic, traditional boost circuit is no longer suitable due to its extreme duty ratio. In this paper, a 1MHz modified SEPIC converter was presented by integrating two diodes, three capacitors and a transformer. By using planer magnetic components, the core volume does not increase. Higher voltage gain and lower voltage stress are obtained simultaneously. Moreover, zero voltage switching (ZVS) is achieved at the same time, which reduces the switching loss caused by the increase of switching frequency. The operational principle and parameter design process are introduced in detail. An 80W prototype has been designed to demonstrate theoretical analysis. The obtained efficiency can reach 92.6% at full load.
Key wordsHigh frequency      high voltage gain      low voltage stress      soft switching      Sepic     
Received: 22 June 2018      Published: 02 September 2019
PACS: TM46  
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Gao Shanshan
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Gao Shanshan,Wang Yijie,Xu Dianguo. A High Frequency High Voltage Gain Modified Sepic Converter[J]. Transactions of China Electrotechnical Society, 2019, 34(16): 3366-3372.
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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L80103     OR     https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I16/3366
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