一种高频高升压比改进型Sepic变换器

doi:10.19595/j.cnki.1000-6753.tces.L80103

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Abstract With the demand of high voltage gain characteristic, traditional boost circuit is no longer suitable due to its extreme duty ratio. In this paper, a 1MHz modified SEPIC converter was presented by integrating two diodes, three capacitors and a transformer. By using planer magnetic components, the core volume does not increase. Higher voltage gain and lower voltage stress are obtained simultaneously. Moreover, zero voltage switching (ZVS) is achieved at the same time, which reduces the switching loss caused by the increase of switching frequency. The operational principle and parameter design process are introduced in detail. An 80W prototype has been designed to demonstrate theoretical analysis. The obtained efficiency can reach 92.6% at full load.

Key words： High frequency high voltage gain low voltage stress soft switching Sepic

Received: 22 June 2018 Published: 02 September 2019

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TM46

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	Articles by authors
	Gao Shanshan
	Wang Yijie
	Xu Dianguo

Cite this article:

Gao Shanshan,Wang Yijie,Xu Dianguo. A High Frequency High Voltage Gain Modified Sepic Converter[J]. Transactions of China Electrotechnical Society, 2019, 34(16): 3366-3372.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L80103 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/I16/3366

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