Abstract In high-voltage and high-frequency converters based on silicon carbide (SiC) MOSFET devices, the rapid changing rate of the switching transient current, di/dt, coupling with the stray inductance in commutation path, will cause the large electric stress and increase electromagnetic interference. The accurate extraction of the stray inductance of the commutating path is significant for analyzing the switching characteristics of the device. Thus,the stray inductance extraction method of commutation path based on the switching oscillation frequency is proposed. This method has some advantages of being independent from the influence of stray resistance, measurement delay, and platform size. Finally, the proposed method is compared to various existing methods for extracting stray inductances, and its accuracy is verified.
Xie Zongkui,Ke Junji,Zhao Zhibin等. Optimized Extraction Method of Stray Inductance in Commutation Path for Silicon Carbide MOSFET[J]. Transactions of China Electrotechnical Society, 2018, 33(21): 4919-4918.
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2018, Vol. 33 
