碳化硅MOSFET换流回路杂散电感提取方法的优化

doi:10.19595/j.cnki.1000-6753.tces.180761

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Abstract In high-voltage and high-frequency converters based on silicon carbide (SiC) MOSFET devices, the rapid changing rate of the switching transient current, di/dt, coupling with the stray inductance in commutation path, will cause the large electric stress and increase electromagnetic interference. The accurate extraction of the stray inductance of the commutating path is significant for analyzing the switching characteristics of the device. Thus,the stray inductance extraction method of commutation path based on the switching oscillation frequency is proposed. This method has some advantages of being independent from the influence of stray resistance, measurement delay, and platform size. Finally, the proposed method is compared to various existing methods for extracting stray inductances, and its accuracy is verified.

Key words： Silicon carbide MOSFET commutation path stray inductance switching oscillation frequency

Received: 03 May 2018 Published: 12 November 2018

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	Articles by authors
	Xie Zongkui
	Ke Junji
	Zhao Zhibin
	Huang Huazhen
	Cui Xiang

Cite this article:

Xie Zongkui,Ke Junji,Zhao Zhibin等. Optimized Extraction Method of Stray Inductance in Commutation Path for Silicon Carbide MOSFET[J]. Transactions of China Electrotechnical Society, 2018, 33(21): 4919-4918.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.180761 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I21/4919

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