基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法

doi:10.19595/j.cnki.1000-6753.tces.170779

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Abstract In order to improve the reliability of power converter, a method for monitoring aging failure in insulated gate bipolar transistor (IGBT) module is presented based on V_CE(on) under certain condition. The V_CE(on) is monitored under certain collector current I_C condition, that is the crossover point of output characteristic curves under different temperatures. Using this method, the health status of IGBT module can be evaluated according to V_CE(on), and the chip junction temperature effect on the results of the assessment can be ignored. Firstly, based on V_CE(on) equivalent model of the structure of IGBT and the output characteristic curves of IGBT module, the crossover point of the collector current was analyzed. It is shown that the corresponding V_CE(on) was not affected by temperature. Then, the paper illuminated the impact of the aging failure on V_CE(on). Finally, two experiments, i.e. accelerated aging tests and cutting off the bond wires one by one, were conducted. The experimental results indicate that the V_CE(on) of IGBT module is not affected by junction temperature under certain collector current condition, but only related to the aging situation of modules. The V_CE(on) under certain condition can be used as aging precursor of condition monitoring for IGBT module. The experimental results are accorded with the theory analysis.

Key words： Reliability aging failure condition monitoring IGBT module

Received: 06 June 2017 Published: 27 July 2018

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	Articles by authors
	Li Yaping
	Zhou Luowei
	Sun Pengju
	Peng Yingzhou
	Cai Jie

Cite this article:

Li Yaping,Zhou Luowei,Sun Pengju等. Condition Monitoring for IGBT Module Aging Failure on V_CE(on) under Certain I_C Conditions[J]. Transactions of China Electrotechnical Society, 2018, 33(14): 3202-3212.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.170779 OR https://dgjsxb.ces-transaction.com/EN/Y2018/V33/I14/3202

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