Transactions of China Electrotechnical Society  2018, Vol. 33 Issue (13): 3130-3139    DOI: 10.19595/j.cnki.1000-6753.tces.170549
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Study on the Vibration of High Voltage Shunt Reactor Considering of Magnetostriction and Winding Force
Zhang Pengning1, Li Lin1, Nie Jingkai2, Fan Chao2, Cheng Zhiguang3
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China;
2. Global Energy Interconnection Research Institute Beijing 102211 China
3. Baoding Tianwei Group Co. Ltd Baoding 071056 China

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Abstract  The main reason for the vibration of the high voltage shunt reactor core is the magnetostrictive effect and the winding deformation. This paper analyzes the magnetostrictive mechanism of the grain oriented silicon steel sheet. The comparison of the essence of magnetostrictive model and Jiles calculation model with the experimental data is analyzed, the results show that the essence of magnetostrictive model can better simulate the magnetostriction strain. The multi-physics simulation software COMSOL is used to establish the vibration model of a high voltage shunt reactor body structure with 10.5 kV rated voltage and capacity of 30 000 kvar. The shunt reactor core vibration and winding force characteristics are analyzed from the perspective of magneto-mechanical coupling, the results show that the force of the winding is very large, and the vibration can not be ignored. And the effect of reducing vibration of core vibration by using the air gap pad of different Young's modulus is studied, the air gap pad with high young's modulus can well reduce the vibration of the shunt reactor.
Key wordsVibration mechanism      essential model      shunt reactor      magnetostriction     
Received: 25 April 2017      Published: 12 July 2018
PACS: TM472  
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Zhang Pengning
Li Lin
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Fan Chao
Cheng Zhiguang
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Zhang Pengning,Li Lin,Nie Jingkai等. Study on the Vibration of High Voltage Shunt Reactor Considering of Magnetostriction and Winding Force[J]. Transactions of China Electrotechnical Society, 2018, 33(13): 3130-3139.
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