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| Power Loss of Power JFET Facing to Low Voltage and High Frequency Switching Application |
| Tian Bo, Wu Yu, Huang Huai, Hu Dongqing, Kang Baowei |
| Beijing University of Technology Beijing 100124 China |
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Abstract A buried-oxide trench-gate bipolar-mode power JFET (BTB-JFET) facing to low voltage and high frequency switching application is presented. Power loss comparison at high frequency among 20V-rated power switching devices, including BTB-JFET, conventional trench-gate bipolar-mode JFET (TB-JFET) and trench-gate MOSFET (T-MOSFET), is carried out by means of simulation based on static analysis and mixed-mode analysis using an inductive switching circuit for the first time. Simulation results show that the gate-drain capacitance CGD of normally-on BTB-JFET has an improvement up to 25% than that of TB-JFET at zero source-drain bias. Normally-on TB-JFET has at least 14% total power loss improvement at 1MHz and 19% at 2MHz compared to that of the T-MOSFET, while normally-on BTB-JFET can provide 6% more improvement at 1 and 2MHz compared to that of the TB-JFET. Simulation results also show that the normally-off JFET always perform worse than the T-MOSFET at different frequencies. The measurement results of samples still under fabrication show that the CGD of normally-on BTB-JFET has an improvement up to 45% than that of TB-JFET at zero source-drain bias, which accords with simulation.
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Received: 14 July 2008
Published: 17 February 2014
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2009, Vol. 24 
