Transactions of China Electrotechnical Society  2017, Vol. 32 Issue (12): 42-49    DOI:
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A Backword Discrete State Event Driven Simulation Method for Power Electronics Based on Finite State Machine
Li Boyang, Zhao Zhengming, Tan Tian, Yang Yi, Jiang Ye, Yuan Liqiang
State Key Lab of Control and Simulation of Power Systems and Generation Equipments Department of Electrical Engineering Tsinghua University Beijing 100084 China

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Abstract  A backward discrete state event driven (BDSED) simulation method based on the backward quantized state system (BQSS) algorithm is proposed in this paper, to solve the difficult problem of rigid state equations in power electronics systems. BDSED method is implicit, and the key point is to select the correct combination of quantization values, which allows the state variables to approach their quantization values. Each state variable has two possible quantization values at each step, thus enumeration is infeasible in complex systems. What’s more, taken into account the constraint and mutual coupling between state variables when determining their quantization values, the question becomes quite difficult. Thus, an implementation approach of BDSED based on finite state machine is proposed in this paper. The simulation algorithm is tested in a converter circuit with non-ideal device models. Simulation results show that BDSED based on finite state machine can efficiently select the combination of quantization values, and its simulation efficiency is obviously higher than DSED as well as traditional time-slicing ODE methods when solving stiff systems such as power converters.
Key wordsBackward discrete state event driven      implicit method      finite state machine      power electronics simulation      stiff systems     
Received: 05 April 2017      Published: 30 June 2017
PACS: TM46  
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Li Boyang
Zhao Zhengming
Tan Tian
Yang Yi
Jiang Ye
Yuan Liqiang
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Li Boyang,Zhao Zhengming,Tan Tian等. A Backword Discrete State Event Driven Simulation Method for Power Electronics Based on Finite State Machine[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 42-49.
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