用于精确预测SiC MOSFET开关特性的分析模型

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Abstract

This paper derives an analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFET.This analytical model involves the parasitic inductances,the nonlinearity of the junction capacitances and the nonlinearity of the transconductance and so on.The basis principle of establishing analytical model is illustrated in detail and the extraction of the key parameters is given.The analytical model of SiC MOSFET is successfully validated by experimental results.We did the analysis of the switching loss based on experimental results is imprecise.Finally,the effects of parasitic elements on the switching performance of SiC MOSFET are accounted and the circuit design rules of high frequency circuit are given.

Key words： Analytical model SiC MOSFET parasitic elements switching performance switching loss

Received: 14 July 2015 Published: 19 January 2017

PACS:

TM133

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	Articles by authors
	Liang Mei
	Zheng Qionglin
	Li Yan
	Ba Tengfei

Cite this article:

Liang Mei,Zheng Qionglin,Li Yan等. Analytical Model of SiC MOSFET for Accurately Predicting the Switching Performance[J]. Transactions of China Electrotechnical Society, 2017, 32(1): 148-158.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I1/148

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