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| The Relationship Between Junction Temperature and Time Delay of Gate Voltage Miller Plateau of IGBT Module |
| Fang Huachao1,2, Zheng Libing2, Wang Chunlei1,2, Fang Guangrong2, Han Li2 |
1. School of Information University of Chinese Academy of Science Beijing 100190 China;
2. Institute of Electrical Engineering Chinese Academy of Science Beijing 100180 China |
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Abstract The relationship between time delay of gate voltage Miller plateau on insulated gate bipolar transistor (IGBT) module and junction temperature has been researched in this paper. Firstly, the temperature characteristic of Miller plateau time delay has been analyzed. Secondly, a measurement system of gate voltage Miller plateau has been set up, which could measure the delay time of Miller plateau accurately and reliably. Finally, experiments verify the temperature characteristic of Miller plateau time delay. Both the simulation and the experimental results show that the time delay of Miller plateau varies with the junction temperature, which has a good linear relationship. In this paper, the time delay of Miller plateau increases 0.74 ns as the junction temperature increases 1℃.
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Received: 10 August 2014
Published: 13 October 2016
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2016, Vol. 31 
