染污硅橡胶在不同憎水性时的污闪特性

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Abstract This paper introduces the flashover characteristics of polluted silicone rubber plate samples with different hydrophobic properties. By virtue of quantitative brushing method, samples were polluted by controlling hydophobicity transfer time to obtain different hydrophobic properties . The maximum value of droplet area on the pollution layer stood for the state of surface hydrophobicity. The impacts of hydrophobicity on flashover voltage, pollution resistance and the development of arc were studied. Test results show that flashover voltages of samples increase with the improvement of surface hydrophobicity. A correlation exists between flashover voltage and the maximum value of droplet area. However, deviation increases from hydrophilic state to hydrophobic state. The morphology of droplets has a great effect on arc development. When drops form continuous water film, the number of arc paths is limited and the value of flashover voltage is low. However, when the drops on the surface are spherical and scattered, discharge areas are scattered s and the flashover voltages are high. According to the results of flashover tests and the different patterns of droplets, hydrophilic surface HC7, is subdivided into HC7A, HC7B, HC7C and HC7D respectively. Despite very unobvious hydrophobicity of HC7B, flashover voltages of samples with HC7B are obviously higher than those with totally hydrophilic states, such as HC7C and HC7D. Therefore, if the configuration structure is designed according to the flashover voltage related to the HC7B state, structure height of composite insulators can be shortened with the ensured safety.

Key words： Silicone rubber insulator hydrophobicity pollution flashover droplet area electric arc

Received: 19 March 2014 Published: 11 July 2016

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TM835

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	Articles by authors
	Dai Hanqi
	Zhao Chenlong
	Liang Jianyu
	Zhou Jun
	Wang Liming

Cite this article:

Dai Hanqi,Zhao Chenlong,Liang Jianyu等. Flashover Characteristic of Polluted Silicone Rubber with Different Hydrophobicity[J]. Transactions of China Electrotechnical Society, 2016, 31(10): 102-111.

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2016/V31/I10/102

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