基于共振隧穿机制的太赫兹波振荡器特性模拟

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Abstract Because of its high frequency and high speed,resonant tunneling device is suitable for the terahertz oscillator source device. In this paper,the oscillation characteristic of resonant tunneling diodes in THz wave range is simulated. The equivalent circuit theory and Pspice software are used on resonant tunneling oscillator equivalent circuit model for the oscillation frequency and power simulation. In the theoretical calculation,the tunneling and transit-time effects and parasitic elements are analyzed,and the results indicate that by improving the RTD and slot antenna structure,resonant tunneling oscillation frequency can reach 1.2 THz,and the output power can reach 115μW. In the Pspice simulation,the results are more consistent with the theoretical calculation.

Key words： THz wave source RTD oscillator oscillation characteristics

Received: 11 October 2013 Published: 22 January 2015

PACS:

TN312.2

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	Articles by authors
	Niu Pingjuan
	Yu Liyuan
	Mao Luhong
	Guo Weilian

Cite this article:

Niu Pingjuan,Yu Liyuan,Mao Luhong等. Simulation of Characteristics of Terahertz Oscillator Based on Resonant Tunneling Mechanism[J]. Transactions of China Electrotechnical Society, 2014, 29(12): 102-106.

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http://dgjsxb.ces-transaction.com/EN/ OR http://dgjsxb.ces-transaction.com/EN/Y2014/V29/I12/102

[1] Tonouchi M. Cutting-edge terahertz technology[J]. Nat. Photonics,2007(1): 97-105.
[2] 郭维廉,牛萍娟,李晓云,等. 利用共振隧穿器件制作太赫兹波源[J]. 微纳电子技术,2010,47(10): 595-602. Guo Weilian,Niu Pingjuan,Li Xiaoyun,et al. The fabrication of THz range device by using resonant tunneling diodes[J]. Micronanoelectronic Technology,2010,47(10): 595-602.
[3] 郭维廉,牛萍娟,苗长云. 共振隧穿器件及其集成技术发展趋势和最新进展[J]. 微纳电子技术,2005(7): 298-304. Guo Weilian,Niu Pingjuan,Miao Changyun. The development trend of resonant tunneling devices and integrated technology[J]. Micronanoelectronic Techno- logy,2005(7): 298-304.
[4] Michael Feiginov,Cezary Syldo,Oleg Cojocari,et al. Resonant- tunnelling- diode oscillators operating at frequencies above 1.1THz[J]. Applied Physics Letters,2012,99: 233506.
[5] Masahiro Asada,Safumi Suzuki,Naomichi Kishimoto. Resonant tunneling diodes for sub-terahertz and terahertz oscillators[J]. Japanese Journal of Applied Physics,2008,47(6): 4375-4384.
[6] Suzuki S,Orihashi N,Asada M. Experimental and theoretical characteristics of sub-terahertz and terahertz oscillations of resonant tunneling diodes integrated with slot antennas[J]. Japanese Journal of Applied Physics,2005,44: 7809-7815.
[7] Asada Masahiro,Suzuki Safumi. Terahertz oscillators using electron devices-an approach with resonant tunneling diodes[J]. Ieice Electronics Express,2011,8(14): 1110-1126.
[8] Hinata K,Shiraishi M,Suzuki S. High power THz oscillators with offset-fed slot antenna and high current density resonant tunneling diodes[C]. IRMMW- THz 2009,2009,1: 264-265.
[9] Kensuke Hinata,Masato Shiraishi,Safumi Suzuki,et al. Sub-terahertz resonant tunneling diode oscillators with high output power using offset-fed slot antenna and high current density[J]. Applied Physics Express. 2010(3): 014001.
[10] Suzuki Safumi,Ter anishi At sushi,Hinat a Kensuke,et al. Fundamental oscillation of up to 831 GHz in GaInAs/AlAs resonant tunneling diode[J]. Applied Physics Express,2009,2(5): 054501.
[11] 程玥,许军. 共振隧穿二极管基础电路的模拟与分析[J]. 微纳电子技术,2003,40(7/8): 579-581. Cheng Yue,Xu Jun. Simulation and analysis of resonant tunneling diode base circuit[J]. Micronanoelectronic Technology,2003,40(7): 579-581.
[12] 王伟,孙浩,孙晓玮,等. InP基RTD特性的数值模拟研究[J]. 固体电子学研究与进展,2010,30(3): 317-332. Wang Wei,Sun Hao,Sun Xiaowei,et al. Numerical simulation study on characteristics of InP based RTD [J]. Research and Progress of Solid State Electronics,2010,30(3): 317-332.
[13] 王振坤,梁惠来,郭维廉,等. 共振隧穿二极管的设计和研制[J]. 微纳电子技术,2002,39(7): 13-16. Wang Zhenkun,Liang Huilai,Guo Weilian,et al. Design and fabrication of resonant tunneling diode[J]. Micronanoelectronic Technology,2002,39(7): 13-16.
[14] 牛萍娟,郭维廉,梁惠来,等. 谐振隧穿二极管的直流模型及其双稳态特性[J]. 半导体学报,2001,22(9): 1171-1174. Niu Pingjuan,Guo Weilian,Liang Huilai,et al. The DC model and bistable characteristics of resonant tunneling diode[J]. Chinese Journal of Semiconductors,2001,22(9): 1171-1174.
[15] Mohammad Javad Sharifi,Yasser Mohammad Banadaki. A spice large signal model for resonant tunneling diode and its applications[C]. AIP Conference Procee- dings,2009,1148: 890-893.