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| Driving and Protection Strategy of SiC MOSFET Based on Multi-Stage Voltage Level Control |
| Bai Jiancheng, Ke Jinkun, Gao Chong, Xu Jingtao, Feng Jingbo |
| State Key Laboratory of Advanced Power Transmission Technology China Electric Power Research Institute Beijing 102209 China |
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Abstract SiC MOSFETs feature low on-resistance, low switching losses, high switching frequencies, and excellent reverse recovery characteristics. Fast switching speeds can lead to severe switching overshoot, oscillations, and crosstalk. In addition, the short-circuit tolerance is weak, and the protection circuit requires a faster response time. Additionally, the fast response and anti-noise capabilities of the short-circuit protection circuit are challenging to balance at higher switching rates. Therefore, this paper proposes a driving and protection strategy based on multi-stage voltage level control. Driving strategy solves the cooperative optimization of multiple objectives in the switching trace. In terms of protection, a detection circuit with on-state voltage compensation is proposed, which reduces the influence of temperature and load changes on detection accuracy. In addition, a two-stage gate voltage reduction method is proposed to improve the time of fault detection in the blind zone and reduce the influence of interference noise. The soft turn-off technology is used to suppress the turn-off overvoltage.
Firstly, the mathematical relationship model between the gate voltage and the voltage/current change rate of the switching process is established. Changing the driving voltage level enables effective control of the current and voltage change rate in the switching process. Switching overshoot Δid and Δvds are suppressed, and the oscillation amplitude is reduced. Secondly, after analyzing the problems of desaturation detection and di/dt detection methods for current faults in SiC MOSFETs, this paper proposes an improved detection circuit for desaturation voltage, incorporating a compensation circuit to mitigate the impact of temperature changes and load fluctuations. Finally, a multi-level drive circuit and an improved protection method are proposed for SiC MOSFET.
A double-pulse experiment and a short circuit test verify the designed multi-level driver. In terms of switching trace control, the multi-level driver employs a three-stage variable voltage control strategy to regulate the gate charge and discharge current at various switching stages. It can realize the multi-objective collaborative optimization of the switching trace. The overshoot and oscillation of SiC MOSFETs are effectively suppressed while achieving fast switching speed and low loss. In terms of short-circuit protection, a detection circuit is proposed to increase the conduction voltage of the compensation loop, which reduces the influence of temperature and load changes. The detection accuracy is greatly improved. The two-stage inverse time protection method enables the independent detection and protection of overcurrent and short-circuit faults. The two-stage turn-off method limits the increase of short-circuit current. The detection time of blind areas under short-circuit faults can be increased to reduce the influence of interference noise, and the soft turn-off technology can be used to suppress the turn-off overvoltage and oscillation.
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Received: 21 November 2024
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[1] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1753.
Sheng Kuang, Ren Na, Xu Hongyi.A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1753.
[2] Yuan Xibo, Laird I, Walder S.Opportunities, challenges, and potential solutions in the application of fast- switching SiC power devices and converters[J]. IEEE Transactions on Power Electronics, 2021, 36(4): 3925-3945.
[3] Yu Baowei, Guo Xizheng, Bu Xucong, et al.Research on the SiC MOSFETs short circuit detection and protection optimization method[C]//2020 IEEE Vehicle Power and Propulsion Conference (VPPC), Gijon, Spain, 2020: 1-7.
[4] 吴海富, 张建忠, 赵进, 等. SiC MOSFET短路检测与保护研究综述[J]. 电工技术学报, 2019, 34(21): 4519-4528.
Wu Haifu, Zhang Jianzhong, Zhao Jin, et al.Review of short-circuit detection and protection of silicon carbide MOSFETs[J]. Transactions of China Electro- technical Society, 2019, 34(21): 4519-4528.
[5] 左璐巍, 辛振, 蒙慧, 等. 动态高温反偏应力下的SiC MOSFET测试平台及其退化机理研究[J]. 电源学报, 2024, 22(3): 211-219.
Zuo Luwei, Xin Zhen, Meng Hui, et al.Test platform and degradation mechanism of SiC MOSFET under dynamic high-temperature reverse bias stress[J]. Journal of Power Supply, 2024, 22(3): 211-219.
[6] 邹铭锐, 曾正, 孙鹏, 等. 基于变电阻驱动的SiC器件开关轨迹协同调控[J]. 电工技术学报, 2023, 38(16): 4287-4300.
Zou Mingrui, Zeng Zheng, Sun Peng, et al.Coor- dinated switching trajectory regulation of SiC device using variable resistance gate drive[J]. Transactions of China Electrotechnical Society, 2023, 38(16): 4287-4300.
[7] Chen Jiangui, Li Yan, Liang Mei, et al.A novel gate driver for suppressing overcurrent and overvoltage of SiC MOSFET[C]//2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019- ECCE Asia), Busan, Korea, 2019: 1-7.
[8] Wei Yuqi, Du Liyang, Du Xia, et al.Multi-level active gate driver for SiC MOSFETs with paralleling operation[C]//2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL), Cartagena, Colombia, 2021: 1-7.
[9] Zhao Shuang, Dearien A, Wu Yuheng, et al.Adaptive multi-level active gate drivers for SiC power devices[J]. IEEE Transactions on Power Electronics, 2019, 35(2): 1882-1898.
[10] Geng Chengfei, Zhang Donglai, Wu Xuanqin, et al.A novel active gate driver with auxiliary gate current control circuit for improving switching performance of high-power SiC MOSFET modules[C]//2020 IEEE 1st China International Youth Conference on Elec- trical Engineering (CIYCEE), Wuhan, China, 2020: 1-7.
[11] Sukhatme Y, Miryala V K, Ganesan P, et al.Digitally controlled gate current source-based active gate driver for silicon carbide MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2020, 67(12): 10121-10133.
[12] 文阳, 杨媛, 宁红英, 等. SiC MOSFET短路保护技术综述[J]. 电工技术学报, 2022, 37(10): 2538-2548.
Wen Yang, Yang Yuan, Ning Hongying, et al.Review on short-circuit protection technology of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2538-2548.
[13] 杨旭, 葛兴来, 柴育恒, 等. 一种基于反向串联稳压二极管钳位的IGBT导通压降在线监测电路[J]. 中国电机工程学报, 2022, 42(12): 4547-4561.
Yang Xu, Ge Xinglai, Chai Yuheng, et al.An online monitoring circuit for IGBT conduction voltage drop based on reverse series zener diodes clamping[J]. Proceedings of the CSEE, 2022, 42(12): 4547-4561.
[14] 宁红英, 孙旭霞, 杨媛. 一种基于diC/dt反馈控制的大功率IGBT驱动保护方法[J]. 电工技术学报, 2015, 30(5): 33-41.
Ning Hongying, Sun Xuxia, Yang Yuan.A high- power IGBT drive protection method based on diC/dt feedback control[J]. Transactions of China Electro- technical Society, 2015, 30(5): 33-41.
[15] Lee S, Kim K, Shim M, et al.A digital signal processing based detection circuit for short-circuit protection of SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2021, 36(12): 13379-13382.
[16] Ouyang Wenyuan, Sun Pengju, Xie Minghang, et al.A fast short-circuit protection method for SiC MOSFET based on indirect power dissipation level[J]. IEEE Transactions on Power Electronics, 2022, 37(8): 8825-8829.
[17] Li Hong, Wang Yuting, Qiu Zhidong, et al.Short- circuit protection circuit of SiC MOSFET based on drain-source voltage integral[C]//2021 IEEE Work- shop on Wide Bandgap Power Devices and Appli- cations in Asia (WiPDA Asia), Wuhan, China, 2021: 344-349.
[18] Guo Zhehui, Li Hui. dv/dt sensing-based short-circuit protection for medium-voltage SiC MOSFETs[J]. IEEE Transactions on Power Electronics, 2023, 38(9): 10554-10558.
[19] Kochoska S, Guitart J R, Richert L, et al.Gate current peaks due to CGD overcharge in SiC MOSFETs under short-circuit test[C]//2023 35th International Sym- posium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, 2023: 246-249. |
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2025, Vol. 40 
