改进肖特基二极管高频电路模型的微波整流电路效率预测

doi:10.19595/j.cnki.1000-6753.tces.241568

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Abstract The microwave rectifier circuit, as an important link in the microwave wireless energy transmission system, mainly utilizes the nonlinear characteristic of the Schottky diode to convert microwave into direct current. For the Schottky diode, the built-in model in the ADS software and the equivalent model in the data sheet do not consider the parasitic effect caused by the substrate structure in the high-frequency environment, which leads to modeling errors and inaccurate predictions of the rectifier circuit efficiency. Therefore, this paper proposes an improved high-frequency circuit model of Schottky diode that takes into account the parasitic effect caused by the substrate structure, accurately characterizes the high-frequency properties of the Schottky diode, and achieves the prediction and optimization design of the microwave rectifier circuit.
Firstly, based on the physical structure of the Schottky diode, a π-type CLC network is used to represent the substrate-induced electrical inductance, and the improved Schottky diode high-frequency circuit model is constructed. Secondly, the nonlinear SPICE parameters are measured using the DC I-V and low-frequency C-V characteristic curves. The Schottky diode test stand and the TRL straight-through calibration piece are made for de-embedding, so as to obtain the Scatter parameter (S-parameter) of the actual Schottky diode. When the absolute value of the S-parameter area difference between the actual Schottky diode and the improved high-frequency circuit model of Schottky diode is the lowest, the optimal linear parasitic parameters of the improved high-frequency circuit model of Schottky diode are extracted.
The transient voltage waveforms at both ends of the diode are simulated by using the built-in model in ADS software and the improved high-frequency circuit model of Schottky diode, and compared with the measured transient voltage waveforms. By comparison, it is found that the area difference of the voltage transient waveform closure curve between the built-in model in ADS software and the actual Schottky diode is 103.45 and 122.58 respectively at 15 dBm and 30 dBm, and the area difference of the improved high-frequency circuit model of Schottky diode and the actual diode voltage transient waveform closure curve is only 72.76 and 36.12.
The improved high-frequency circuit model of Schottky diode and the built-in model in ADS software are respectively placed into the rectifier circuit with the same operating frequency of 2.45 GHz for simulation, and the efficiency of the measured rectifier circuit is compared when the input power is 30 dBm. The rectifier circuit efficiency using the built-in diode model of ADS software is 77.63%, compared with the measured rectifier circuit efficiency of 72.29%, the error is 7.39%. The simulated efficiency of the rectifier circuit using the improved high-frequency circuit model of Schottky diode is 73.48%, compared with the measured rectifier circuit efficiency of 72.29%, the error is only 1.65%, a decrease of 5.74 percentage points.
This paper draws the following conclusions: (1) Compared with the built-in model in ADS software and the equivalent model in the data sheet, the proposed improved high-frequency circuit model of Schottky diode can accurately characterize the high frequency properties of Schottky diode considering the parasitic effect caused by the substrate structure in high frequency environment. (2) From the efficiency results of the rectifier circuit, the proposed improved high-frequency circuit model of Schottky diode fits the measured efficiency curve of the rectifier circuit better than the built-in model in ADS software, and can more accurately predict the efficiency of the rectifier circuit. (3) The proposed improved high-frequency circuit model of Schottky diode construction method has some commonality and can be easily extended to other Schottky diodes.

Key words： Microwave rectifier circuit improved high-frequency circuit model Schottky diode efficiency prediction substrate de-embedding

Received: 05 September 2024

PACS:	TM724
	TN385

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	Lu Weiguo
	Wang Xiaotong
	Li Binbin
	Wang Ke
	Zhang Huaiqing

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Lu Weiguo,Wang Xiaotong,Li Binbin等. Predicting the Efficiency of Microwave Rectifier Circuit with Improved High-Frequency Circuit Model of Schottky Diode[J]. Transactions of China Electrotechnical Society, 2025, 40(17): 5379-5388.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.241568 OR https://dgjsxb.ces-transaction.com/EN/Y2025/V40/I17/5379

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