高环境温度高功率密度SiC电机驱动控制器设计与实现

doi:10.19595/j.cnki.1000-6753.tces.241449

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Abstract This paper presents a comprehensive design methodology for a silicon carbide (SiC) power controller capable of high-temperature operation (105℃ ambient), high power density, and exceptional reliability. Building upon existing SiC controller design experience (85℃ ambient temperature, 37.1 kW/L power density), the design and optimization were conducted in three key areas: automated system layout optimization, compact electromagnetic compatibility (EMC) filters, and an active thermal management system based on junction temperature monitoring. These advancements reduced the overall size of the SiC controller while simultaneously enhancing both high-temperature performance and operational reliability.
An automated system layout optimization was developed with a focus on three critical components-power modules, DC-link capacitors, and busbars-which were found to collectively account for more than 50% of the controller's total volume. First, a sequence-pair model was established to characterize chip placement and orientation, followed by the definition of a fitness evaluation function for power modules. An artificial neural network (ANN)-based optimization algorithm was then implemented, resulting in the development of a highly compact 1 200 V/600 A SiC power module. Next, conventional two-dimensional (2D) layout rules were extended to a three-dimensional (3D) component arrangement strategy. A 3D escape-line technique was adopted to successfully address interconnection challenges in complex spatial configurations. Through these innovations, a significant reduction in power component dimensions was achieved without compromising electrical performance or thermal coupling effects.
To address the dual EMC challenges arising from SiC's fast switching speeds and variable frequency operation, a hybrid active-passive filter solution was adopted to ensure harmonic suppression while smaller size. The active filter section, incorporating current sampling, current feedback, feedforward regulationand analog control, improved low-frequency interference insertion loss by approximately 10 dB. Compared to traditional passive filter solutions, the hybrid approach reduced total volume by 17%.
For reliable high-temperature operation, this paper first proposes a MOSFET junction temperature monitoring method based on third-quadrant body diode forward voltage. This method overcame the limitations of conventional on-state voltage monitoring approaches, which typically exhibit insufficient temperature sensitivity at low currents and are susceptible to positive bias temperature instability (PBTI). Building upon the existing controller functions, a highly multiplexed high-resolution junction temperature sampling circuit was designed, achieving high-precision online junction temperature (T_J) monitoring across the entire operating range. Using the T_J as feedback, a T_J closed-loop control system based on switching frequency regulation was implemented. Simulation results demonstrate that, compared with conventional fixed switching frequency solutions, the proposed approach increases peak power by 20% without compromising reliability.
Through integration of these three key technologies, a 105℃ambient-tolerant SiC controller prototype was successfully developed. Experimental validation demonstrated a peak power output of 127 kW, power density of 47.8 kW/L, maximum room-temperature efficiency of 99.85%, and full compliance with GB/T 18655 Class 3 EMC standards across the entire operational envelope.

Key words： SiC motor controller power density automatic layout EMI filter junction temperature control

Received: 15 August 2024

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	Zheng Dan
	Wen Xuhui
	Fan Tao
	Ning Puqi
	Zhang Dong

Cite this article:

Zheng Dan,Wen Xuhui,Fan Tao等. Design and Implementation of SiC Motor Drive Controller with High Environmental Temperature and High Power Density[J]. Transactions of China Electrotechnical Society, 2025, 40(15): 4889-4904.

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[1] Kolar J W, Drofenik U, Biela J, et al.PWM converter power density barriers[C]//2007 Power Conversion Conference-Nagoya, Nagoya, Japan, 2007: 9-29.
[2] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1753.
Sheng Kuang, Ren Na, Xu Hongyi.A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1753.
[3] 王学梅. 宽禁带碳化硅功率器件在电动汽车中的研究与应用[J]. 中国电机工程学报, 2014, 34(3): 371-379.
Wang Xuemei.Researches and applications of wide bandgap SiC power devices in electric vehicles[J]. Proceedings of the CSEE, 2014, 34(3): 371-379.
[4] 中国汽车工程学会. 节能与新能源汽车技术路线图 2.0[M]. 北京: 机械工业出版社, 2020.
[5] 李晔, 范涛, 李琦, 等. 车用SiC电机驱动控制器用金属化膜电容研究[J]. 中国电机工程学报, 2020, 40(6): 1801-1808.
Li Ye, Fan Tao, Li Qi, et al.Research on metallized film capacitor of SiC motor control unit for electric vehicle[J]. Proceedings of the CSEE, 2020, 40(6): 1801-1808.
[6] 宁圃奇, 郑丹, 康玉慧, 等. SiC车用电机驱动研究发展与关键技术[J]. 电子与封装, 2022, 22(3): 4-14.
Ning Puqi, Zheng Dan, Kang Yuhui, et al.Technical paths towards SiC motor controller for electric vehicles[J]. Ecletronics and Packaging, 2022, 22(3): 4-14.
[7] 张栋, 范涛, 温旭辉, 等. 电动汽车用高功率密度碳化硅电机控制器研究[J]. 中国电机工程学报, 2019, 39(19): 5624-5634, 5890.
Zhang Dong, Fan Tao, Wen Xuhui, et al.Research on high power density SiC motor drive controller[J]. Procee- dings of the CSEE, 2019, 39(19): 5624-5634, 5890.
[8] 牛富丽, 曾正, 孙鹏, 等. 逆变器功率密度的极限分析与提升方法[J/OL]. 电工技术学报, 2025: 1-13 [2025-06-15]. https://doi.org/10.19595/j.cnki.1000-6753.tces.242054.
Niu Fuli, Zeng Zheng, Sun peng, et al. Study on theore- tical limitation and promotion routine of power density for inverter application[J/OL]. Transactions of China Electrotechnical Society, 2025: 1-13[2025- 06-15]. https://doi.org/10.19595/j.cnki.1000-6753.tces.242054.
[9] Xu Zhuxian, Jiang Dong, Li Ming, et al.Development of Si IGBT phase-leg modules for operation at 200℃ in hybrid electric vehicle applications[J]. IEEE Transactions on Power Electronics, 2013, 28(12): 5557-5567.
[10] 罗宁胜, 曹建武. 高温SOI技术的发展现状和前景[J]. 电子与封装, 2022, 22(12):89-97.
Luo Ningsheng, Cao Jianwu.Development status and prospect of high-temperature silicon-on-insulator (SOI) technology[J]. Electronics & Packaging, 2022, 22(12): 89-97.
[11] 惠琦, 任小永, 陈乾宏. 采用环形变压器的小功率隔离型DC-DC变换器共模电磁干扰噪声建模与抑制[J]. 电工技术学报, 2024, 39(22): 7126-7138.
Hui Qi, Ren Xiaoyong, Chen Qiankkun.Common- mode electromagnetic interference noise modeling and suppression for low-power isolated power converter using toroidal transformer[J]. Transactions of China Electrotechnical Society, 2024, 39(22): 7126-7138
[12] Dutta A, Ang S S.Electromagnetic interference simulations for wide-bandgap power electronic modules[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3): 757-766.
[13] Oswald N, Anthony P, McNeill N, et al. An experi- mental investigation of the tradeoff between switching losses and EMI generation with hard-switched all-Si, Si-SiC, and all-SiC device combinations[J]. IEEE Trans- actions on Power Electronics, 2014, 29(5): 2393-2407.
[14] Touré B, Schanen J L, Gerbaud L, et al.EMC modeling of drives for aircraft applications: modeling process, EMI filter optimization, and technological choice[J]. IEEE Transactions on Power Electronics, 2013, 28(3): 1145-1156.
[15] 回晓双, 宁圃奇, 范涛, 等. EconoDUAL封装、母线电压800 V的1 200 A IGBT功率模块设计与开发[J]. 电源学报, 2024, 22(3): 72-77.
Hui Xiaoshuang, Ning Puqi, Fan Tao, et al.Design and development of 1 200 A IGBT power module with EconoDUAL packaging and 800 V bus voltage[J]. Journal of power supply, 2024, 22(3): 72-77.
[16] Laird I, Yuan Xibo, Scoltock J, et al.A design optimization tool for maximizing the power density of 3-phase DC-AC converters using silicon carbide(SiC) devices[J]. IEEE Transactions on Power Electronics, 2018, 33(4): 2913-2932.
[17] 谢宗奎, 柯俊吉, 赵志斌, 等. 碳化硅MOSFET换流回路杂散电感提取方法的优化[J]. 电工技术学报, 2018, 33(21): 4919-4927.
Xie Zongkui, Ke Junji, Zhao Zhibin, et al.Extraction method of stray inductance in commutation path for silicon carbide MOSFET[J]. Transactions of China Electrotechnical Society, 2018, 33(21): 4919-4927.
[18] Mei Yunhui, Hao Baisen, Chen Yue, et al.Efficient layout design automation for multi-chip SiC modules targeting small footprint and low parasitic[J]. IET Power Electronics, 2020, 13(10): 2069-2076.
[19] Zhou Yongxing, Chen Wenjie, Yang Xu, et al.A new integrated active EMI filter topology with both CM noise and DM noise attenuation[J]. IEEE Transactions on Power Electronics, 2022, 37(5): 5466-5478.
[20] Wang Shuo, Maillet Y Y, Wang Fei, et al.Investigation of hybrid EMI filters for common-mode EMI suppres- sion in a motor drive system[J]. IEEE Transactions on Power Electronics, 2010, 25(4): 1034-1045.
[21] Han Yongjie, Wu Zhihong, Wu Deliang.Hybrid common-mode EMI filter design for electric vehicle traction inverters[J]. Chinese Journal of Electrical Engineering, 2022, 8(4): 52-60.
[22] 魏云海, 陈民铀, 赖伟, 等. 基于IGBT结温波动平滑控制的主动热管理方法综述[J]. 电工技术学报, 2022, 37(6): 1415-1430.
Wei Yunhai, Chen Minyou, Lai Wei, et al.Review on active thermal control methods based on junction temperature swing smooth control of IGBTs[J]. Trans- actions of China Electrotechnical Society, 2022, 37(6): 1415-1430.
[23] 胡震, 崔曼, 吴晓华, 等. 功率器件结温主动控制及优化策略[J]. 电工技术学报, 2024, 39(18): 5732-5741.
Hu Zhen, Cui Man, Wu Xiaohua, et al.Active control and optimization strategy of junction temperature for power devices[J]. Transactions of China Electrotech- nical Society, 2024, 39(18): 5732-5741.
[24] 李武华, 陈玉香, 罗皓泽, 等. 大容量电力电子器件结温提取原理综述及展望[J]. 中国电机工程学报, 2016, 36(13): 3546-3557, 3373.
Li Wuhua, Chen Xiangyu, Luo Haoze, et al.Review and prospect of junction temperature extraction principle of high power semiconductor devices[J]. Proceedings of the CSEE, 2016, 36(13): 3546-3557, 3373.
[25] 宁圃奇, 郑丹, 康玉慧, 等. 基于大电流导通压降法的车用IGBT结温监测方法综述[J]. 电源学报, 2022, 20(2): 161-172.
Ning Puqi, Zheng Dan, Kang Yuhui, et al.Review of junction temperature monitoring methods for IGBT used in vehicles based on on-state voltage at high current[J]. Journal of Power Supply, 2022, 20(2): 161-172.
[26] 郑丹, 宁圃奇, 仇志杰, 等. 基于老化补偿的功率模块全生命周期在线结温监测方法[J]. 电工技术学报, 2024, 39(12): 3705-3717.
Zheng Dan, Ning Puqi, Qiu Zhijie, et al.Full life- cycle online junction temperature monitoring of power module based on aging compensation[J]. Transactions of China Electrotechnical Society, 2024, 39(12): 3705-3717.
[27] Lelis A J, Green R, Habersat D B, et al.Basic mechanisms of threshold-voltage instability and implica- tions for reliability testing of SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 316-323.
[28] Schleich C, Waldhoer D, Waschneck K, et al.Physical modeling of charge trapping in 4H-SiC DMOSFET technologies[J]. IEEE Transactions on Electron Devices, 2021, 68(8): 4016-4021.
[29] Karki U, Peng Fangzheng.Effect of gate-oxide degrada- tion on electrical parameters of power MOSFETs[J]. IEEE Transactions on Power Electronics, 2018, 33(12): 10764-10773.
[30] 张擎昊, 郑大勇, 张品佳. SiC MOSFET结温监测与控制技术综述[J]. 中国电机工程学报, 2025, 45(3): 1034-1052.
Zhang Qinghao, Zheng Dayong, Zhang Pinjia.A review of junction temperature monitoring and control methods for SiC MOSFETs[J]. Proceedings of the CSEE, 2025, 45(3): 1034-1052.