基于空间多点位温度IGBT器件参数逆推的健康状态在线监测方法

doi:10.19595/j.cnki.1000-6753.tces.240011

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Abstract As the core component of high voltage and high power energy conversion systems, the insulated gate bipolar transistor (IGBT) has been widely used in new energy power generation, high-speed railways, aerospace, and other fields. Due to the complex and various working environments and operation conditions, large temperature fluctuations arise during the operation of the IGBT module. Considering that the thermal expansion coefficient of each layer for the module is different, thermal mechanical stress is generated between each layer. Continuous temperature fluctuation produces cyclic thermal stress, resulting in thermal damage to materials in each layer. When the accumulation of thermal damage exceeds the safety threshold, the IGBT module will suddenly fail and eventually cause the shutdown of the energy conversion system. According to the reliability research report of power electronic systems, about 34% of energy conversion system failures are attributed to the failure of power devices such as IGBTs. Therefore, from the reliability perspective, online health condition monitoring of the IGBT module has become a significant guarantee of improving the operational reliability of the energy conversion system. This paper proposes an online health monitoring method based on parameter inversion of spatial multi-point temperature to realize thermal damage diagnosis for IGBT's bond wires and solder layer. This method can avoid the sudden failure of the IGBT module due to the accumulation of thermal damage exceeding the safety threshold, improving the reliable performance of the energy conversion system. Firstly, considering the influence of solder layer aging on the heat flow path inside the module, the temperature distribution of multiple points on the baseplate is changed. The selected multi-point baseplate temperature is collected by placing a temperature sensor between the baseplate and the heatsink. An online monitoring model of solder aging is establishedbased on the multi-point temperature difference of baseplate (▽T_P). The databases of ▽T_P and chip-to-substrate thermal impedance (Z_JC) are established by an offline accelerated aging test method. In the application, Z_JCis called by ▽T_P to realize an online diagnosis of solder layer health status. Secondly, the calculation model of conduction power loss in hybrid aging mode is established. Accordingly, the inverse calculation algorithm of on-state collector-emitter voltage V_ce-on based on conduction power loss is proposed. The chip junction temperature T_J is calculated based on the updated Z_JC value, and the collector current I_C and T_Jare given into the I_C-T_J-V_ce-on database of the healthy IGBT module to invoke V_ce-on,data at the current junction temperature. The influence of junction temperature rise caused by solder aging on V_ce-onis eliminated, and the aging state of bond wires is diagnosed based on the deviation of V_ce-on and V_ce-on,data. Simulation and experimental results show the effectiveness of the proposed method, and the diagnostic error is about 3% under experimental conditions.

Key words： Insulated gate bipolar transistor (IGBT) online monitoring reliability health condition

Received: 04 January 2024

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TM46

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	Hu Zhen
	Cui Man
	Wu Xiaohua
	Shi Tao

Cite this article:

Hu Zhen,Cui Man,Wu Xiaohua等. On-Line Condition Monitoring of IGBT Module Based on Parameter Inversion of Spatial Multi-Point Temperature[J]. Transactions of China Electrotechnical Society, 2025, 40(2): 452-462.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.240011 OR https://dgjsxb.ces-transaction.com/EN/Y2025/V40/I2/452

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