|
|
|
| An Improved Power PiN Diode Model for PSpice |
| Li Fangzheng1, Xu Qinfu2, Lai Jianjun1, Li Guangsheng1 |
| 1. Academy of Armored Forces Engineering Beijing 100072 China 2. Troop 72690 of PLA Taian 271000 China |
|
|
|
|
Abstract A novel hybrid PSpice model for power PiN diode is proposed to overcome the shortcoming of physics-based model and macro-model. The model is composed of reverse recovery current model, forward recovery current model and charge storage area model based on an adjustable resistor, which can represent the dynamic behavior of PiN diode. The model take advantages of physics-based model and macro-model. Simulation and experiments demonstrate that the model is effective with reasonable accuracy.
|
|
Received: 03 November 2010
Published: 07 March 2014
|
|
|
|
|
|
[1] 章勇高, 高彦丽, 张凯. 抑制共模干扰的并联有源补偿电路设计[J]. 电工电能新技术, 2008, 27(4): 18-21.
[2] Tseng K J, Foo C F, Palmer P R. Implementing power diode models in spice and saber[C]. Proceedings of the IEEE Power Electionics Specialist Coference , 1994: 59-63.
[3] Liang Y C, Gosbell V J. Diode forward and reverse recovery model for power electronics SPICE simulations[J]. IEEE Transactions Power Electron, 1990, 5(3): 346-356.
[4] Kraus R, Hoffmann K, Mattausch H J. A precise model for the transient characteristics of power diodes [C]. Proceedings of the IEEE Power Electionics Specialist Coference, 1992: 863-869.
[5] Ma C L, Lauritzen P O, Lin P Y, et al. A systematic approach to modeling power semiconductor devices based on charge control principles [C]. Proceedings of the IEEE Power Electionics Specialist Coference, 1994: 31-37.
[6] Strollo A G M. A new spice model of power PiN diode based on asymptotic waveform evaluation [C]. Proceedings of the IEEE Transactions Power Electron, 1997, 12(1): 120-128.
[7] Buiatti G M, Cappelluti F, Ghione G. Power PiN diode model for SPICE simulation[C]. Proceedings of the IEEE Power Electionics Specialist Coference, 2005: 1911-1916.
[8] Mantooth H A, Perry R G, Duliere J L. A unified diode model for circuit simulation[C]. Proceedings of the IEEE Power Electionics Specialist Coference, 1995: 851-857.
[9] 盛定仪, 杨耿, 谭吉春, 等. 功率PiN二极管PSpice子电路模型[J]. 现代电子技术, 2007, (30)6: 141-143.
[10] 张宇, 孔力. IGBT的Hammerstein结构宏模型研究[J]. 电工电能新技术. 2001, 20(3): 5-8.
Zhang Yu, Kong Li. Hammerstein structure macro-model research of IGBT[J]. Advanced Technology of Electrical Engineering and Energy, 2001, 20(3): 5-8. |
|
|
|
2011, Vol. 26 
