考虑二极管非理想特性的中点钳位三电平电路的分析

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摘要功率二极管非理想特性表现为较高的正向恢复电压与反向恢复电流。本文在分析二极管非理想特性产生机理的基础上, 研究了功率二极管在中点钳位（NPC）三电平电路中不同工作状态下的瞬态行为及其对三电平电路主开关管工作性能的影响。通过Saber仿真软件建立了具有正向与反向恢复特性的二极管功能模型, 并通过NPC三电平电路的仿真, 验证了该模型对于定量分析三电平电路是可行的。实验结果进一步证明了理论分析与仿真分析的正确性。

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	孟庆云
	马伟明
	孙驰
	揭贵生

关键词 ：功率二极管, 正向恢复, 反向恢复, NPC三电平电路

Abstract：The nonideal characteristic of high power diode is mainly the higher forward recovery voltage and reverse recovery current. Based on the generant mechanism of the nonideal characteristic, the transient behavior of diode is investigated in the various circuit state of the three-level neutral point clamping (NPC), and the effect on the main switch is also studied. The diode functional model with forward and reverse recovery is built by Saber. The feasibility of the diode model in quantitative analyzing the three-level NPC is proved by the simulation. The experiment result further shows that the theoretical analysis and the simulation is correct.

Key words： Power diode forward recovery reverse recovery three-level NPC circuit

收稿日期: 2009-12-21 出版日期: 2014-03-04

PACS:

TM464

基金资助:国家自然科学基金委员会创新研究群体科学基金（50721063）和国家自然科学基金（50607020、50737004ZD）资助项目

作者简介: 孟庆云男, 1979年生, 博士研究生, 研究方向为大容量电能变换技术。马伟明男, 1960年生, 教授, 博士生导师, 中国工程院院士, 研究方向为独立电源系统、电力电子及电力系统电磁兼容等。

引用本文:

孟庆云, 马伟明, 孙驰, 揭贵生. 考虑二极管非理想特性的中点钳位三电平电路的分析[J]. 电工技术学报, 2010, 25(6): 40-46. Meng Qingyun, Ma Weiming, Sun Chi, Jie Guisheng. The NPC Three-Level Circuit Considering Nonideal Characteristic of Diode. Transactions of China Electrotechnical Society, 2010, 25(6): 40-46.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2010/V25/I6/40

[1] Shammas N, Chamund D, Taylor P. Forward and reverse recovery behavior of diodes in power converter applications[C]. 24th International Conference on Microelectronics, 2004, 1: 3-10.
[2] 易荣, 赵争鸣, 袁立强. 高压大容量变换器中快恢复二极管的模型[J]. 电工技术学报, 2008, 23(7): 62-67.
[3] Lauritzen P O, Ma C L. A simple diode model with reverse recovery[J]. IEEE Transactions on Power Electronics, 1991, 6(2): 188-191.
[4] Liang Y C, Gosbell V J. Diode forward and reverse recovery model for power electronic SPICE simulation[J]. IEEE Transactions on Power Elec- tronics, 1990, 5(3): 346-356.
[5] Ma C L, Lauritizen P O. A simple power diode model with forward and reverse recovery[J]. IEEE Transactions on Power Electronics, 1993, 8(4): 342-346.
[6] Kraus R, Hoffmann K, Mattausch H J. A precise model for the transient characteristics of power diodes[C]. IEEE Power Electronics Specialists Conference, 1992, 1: 863-869.
[7] Tseng K J, Foo C F, Palmer P R. Implementing power diode models in Spice and Saber[C]. IEEE Power Electronics Specialists Conference, 1994, 1: 59-63.
[8] Yamazaki M, Kobayashi H, Shinohara S. Forward transient behavior of PiN and super junction diodes[C]. The 16th International Symposium on Power Semiconductor Devices and ICs, Kitayushu, 2004: 197-200.
[9] Kolessar R. Physical study of the power diode turn-on process[C]. IEEE Industry Applications Conference, 2000, 5: 2934-2940.
[10] Chang W L, Song B P. Design of a thyristor snubber circuit by considering the reverse recovery process[J]. IEEE Transactions on Power Electronics, 1988, 3(4): 440-446.
[11] 李毅, 魏宇洁. 功率模块应用手册[M]. 香港: 赛米控国际公司, 2003.
[12] Stephen J F, Daniel J T, John E F, et al. The application of saturable turn-on snubbers to IGBT bridge-leg circuits[J]. IEEE Transactions on Power Electronics, 1991, 14(6): 1101-1110.
[13] Kim I D, Nho E C, Bose B K. A new snubber circuit for multilevel inverter and converter[C]. IEEE Industry Applications Conference, 1998, 2: 1432- 1439.