一种基于di<sub>C</sub>/dt反馈控制的大功率IGBT驱动保护方法

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摘要针对大功率IGBT提出一种新型的有源门极驱动保护方法。在IGBT正常开通与关断过程中,利用di_C/dt反馈控制,设计软开通及软关断电路,有效缩短IGBT的开通与关断时间,提高IGBT的开关频率,减小器件功率损耗;在IGBT发生短路时,结合di_C/dt反馈技术,设计改进型有源钳位保护电路,实现IGBT软关断,防止关断时产生较大的过冲电压损坏IGBT,同时有效减小门极触发电阻R_g上的损耗。利用Saber软件进行电路仿真,并基于大功率IGBT模块YMIF1200-33实验平台,验证方案的可行性,结果表明,相对于传统控制方案,正常开关情况下,开通时间缩短了26.5%,关断时间缩短了52.6%;短路情况下,相对于传统有源钳位方法,改进方案在有效钳住V_CE电压的同时,关断期间门极电阻上的电流减小到原来的35.4%,并能在短路发生的第一时间迅速可靠地关断IGBT。

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	宁红英
	孙旭霞
	杨媛

关键词 ： IGBT模块, 驱动保护, 开关损耗, 软开关

Abstract：This paper presents a new active gate driver protection method for high-power IGBTs.In the normal IGBT turn-on and turn-off process,by using di_C/dt feedback control,a soft turn-on and turn-off circuit is proposed,which effectively shortens the turn-on and turn-off time,increases the IGBT switching frequency,and reduces the power loss of the device.When IGBT has a short circuit,combining with the suggested di_C/dt feedback technology,an improved active clamping protection circuit is realized which implements the soft turn-off of the IGBT,prevents large voltage overshoot at the turn-off time to damage IGBT,and also effectively reduces the gate trigger resistance R_g loss.With Saber simulation software and high-power IGBT module YMIF1200-33 experimental platform,the feasibility of the program was verified.The results shows that under the normal circumstances,comparing to the traditional control scheme,this design scheme shortens the turn-on time by 26.5% and turn-off time by 52.6%.While under the short-circuit conditions,comparing to the traditional active clamp method,the improved scheme can effectively control V_CE,reduce the current of the internal gate resistance to 35.4% of the original value during the turn-off time,and reliably shut off the IGBT at the first time.

Key words： IGBT modules driver protection switching loss soft turn-off

收稿日期: 2014-11-15 出版日期: 2015-04-13

PACS:

TN3

基金资助:国家自然科学基金(51477138),陕西省科技统筹创新工程(2013KTCQ01-26),陕西省科技攻关计划(201406-01)和西安市科技计划(CXY1347(1))资助项目。

通讯作者: 杨媛女,1974年生,教授,博士生导师,研究方向为数模混合集成电路设计、电路系统设计。

作者简介: 宁红英女,1982年生,硕士,研究方向为检测技术与自动化装置。杨媛女,1974年生,教授,博士生导师,研究方向为数模混合集成电路设计、电路系统设计。

引用本文:

宁红英,孙旭霞,杨媛. 一种基于di_C/dt反馈控制的大功率IGBT驱动保护方法[J]. 电工技术学报, 2015, 30(5): 33-41. Ning Hongying,Sun Xuxia,Yang Yuan. A High-power IGBT Drive Protection Method Based on di_C/dt Feedback Control. Transactions of China Electrotechnical Society, 2015, 30(5): 33-41.

链接本文:

http://dgjsxb.ces-transaction.com/CN/Y2015/V30/I5/33

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