Research on the Voltage Sharing in Series Coupled Diodes for High Voltage and High Frequency Rectifier Applications
Chen Xi1, 2, Wang Jin3, Xiao Lan1
1. Jiansu Key Laboratory of Net Energy Generation and Pouer Conversion Nanjing University of Aeronautics & Astronautics Nanjing 210016 China 2. Anhui Provine Hefei Power Company Institute of Automation Hefei 230000 China 3. Nanjing University of Posts & Telecommunications Nanjing 210003 China
Abstract:The high voltage and high power converters require high voltage level of the power electronic devices, which would cause extra costs, large volume and short lifetime. One of feasible methods to derate the voltage of the devices is to use the elements coupled in series currently. However, the serial devices can not get equal voltage sharing. This paper discusses the problem of the voltage sharing in series coupled diodes, and some factors that influence this problem are gotten based on the analysis of the equivalent network of the coupled diodes. The influence of the parasitic capacitance and the number of the coupled diodes are discussed, and the phenomenon of unequal distribution of each diode in bridge rectifier circuit is resolved. At last the solution and the experiment verification are given. The simulation and the experiment indicate that the main factor that causes the voltage of the coupled diodes different under high voltage pressure is the parasitic capacitance, and the influence can be solved effectively by coupling a compensating resistance and a compensating capacitor in parallel with each switch.
陈曦, 王瑾, 肖岚. 用于高压高频整流的二极管串联均压问题[J]. 电工技术学报, 2012, 27(10): 207-214.
Chen Xi, Wang Jin, Xiao Lan. Research on the Voltage Sharing in Series Coupled Diodes for High Voltage and High Frequency Rectifier Applications. Transactions of China Electrotechnical Society, 2012, 27(10): 207-214.
[1] 夏冰, 阮新波, 陈武. 高压大功率场合LCC谐振变换器的分析与设计[J]. 电工技术学报, 2009, 24(5): 60-66. Xia Bing, Ruan Xinbo, Chen Wu. Analysis and design of LCC resonant converter for high voltage and high power applications[J]. Transactions of China Electrot- echnical Society, 2009, 24(5): 60-66. [2] 黄峥嵘. 几种高压开关电源软开关电路的研究[J]. 电源技术应用, 2008, 11(3): 55-58. Huang Zhengrong. Research of several high voltage SMPS soft-switching circuit[J]. Power Supply Technologies and Applications, 2008, 11(3): 55-58 [3] 刘福鑫. 高压直流电源系统中DC-DC变换器的研究[D]. 南京: 南京航空航天大学, 2004. [4] 王兆安, 黄俊. 电力电子变流技术[M]. 北京: 机械工业出版社, 2005. [5] 李宏. 电力电子设备常用元器件及集成电路应用指南[M]. 北京: 机械工业出版社, 2001. [6] 王兆安. 电力电子设备设计和应用手册[M]. 北京: 机械工业出版社, 2002. [7] 李宏, 邹伟, 宣伟民, 等. 浅谈高电压电力电子变流器中串联电力半导体器件的均压问题[J]. 电气应用, 2005, 24(12): 22-24. Li Hong, Zou Wei, Xuan Weimin, et al. Discussion on high voltage power eletronic converters in series of power semiconductor devices are pressing prblems[J]. Electrotechnical Journal, 2005, 24(12): 22-24. [8] 陈小玲. 二极管串联高压整流的电压分布与均压问题[J]. 广东民族学院学报, 1997, 4(12): 88-91. Chen Xiaoling, Diode series high voltage rectifier voltage distribution and equatizing problem[J]. Journal of Guangdong Institute of Nationalties, 1997, 4(12): 88-91. [9] Morren J, De Haan S W H, Ferr Eira J A. Design of compact high-voltage battery-powerd DC-DC source [C]. IEEE Power Electronics Specialist Conference, Vancouver, BC: 2001. [10] Bredenkamp G L, Nel J J, Mulder D J. Transient voltage sharing in series coupled high voltage Switches[C]. Eighth IEEE International Pulsed Power Conference, San Diego, California, 1991: 1016-1019. [11] Vitins J, Steiner J L, Lawatsch H. Power semiconductor devices for sub-micro-second laser pulse generation[C]. 18th IEEE Power Modulator Symposium South Carolina, 1988. [12] Ncl J J, Mulder D J, Bredenkamp G L. A Series thyristor switch driving a multi-stage ferrite pulse compressor for copper-vapour-laser application[C]. 19th IEEE Power Modulator Symposium, San Diego, 1990. [13] 何立善. 电绝缘子串上的电压分布[J]. 佛山大学学报, 1995, 13(6): 92-95. He Lishan. The Potential Distribution on the Electronic Insulators[J]. Journal of Foshan University, 1995, 13(6): 92-95. [14] 张磊, 傅正财, 孙伟等. 长串高压硅堆的电压分布于不等值均压分析[J]. 高压电器, 2009, 45(6): 24-27. Zhang Lei, Fu Zhengcai, Sun Wei, et al. Analysis of voltage distribution along series silicon stacks and voltage sharing by unequal parameter method[J]. High Voltage, 2009, 45(6): 24-27.