Abstract：The parasitic capacitance parameters are most essential for modeling the equivalent wide-band circuit model of converter system. A simplified modeling method of capacitance extraction based on boundary element method (BEM) is proposed. In the method presented, simulation model of the shield may not be chamfered. Consequently, the edge and corner of shield need not to be handled with sphere, cylinder and other curved surface. In addition to taking location into account, much more attention is paid to analyze the effect of chamfer on capacitance parameters. The availability of this modeling method is demonstrated by comparing the capacitance parameters of chamfered shield with that of non-chamfered shield. It provides a better trade-off between accuracy and efficiency and can be widely used in capacitance extraction of metal frameworks with large-size and complex structures.
刘士利, 王泽忠, 孙静. HVDC换流系统屏蔽罩寄生电容提取[J]. 电工技术学报, 2011, 26(2): 201-206.
Liu Shili, Wang Zezhong, Sun Jing. Extraction of Parasitic Capacitance of Shield in HVDC Converter Stations. Transactions of China Electrotechnical Society, 2011, 26(2): 201-206.
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2011, Vol. 26 
