低光能触发的砷化镓光导开关导通机理

doi:10.19595/j.cnki.1000-6753.tces.221390

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Abstract High repetitive ultrawide band pulse possesses wide application prospect to civil and military fields, whose key parameters are decided by prosperities of the pulsed power semiconductor device. Gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) in avalanche mode based on semi-insulating (SI) wafer possesses properties of low-energy triggering, high voltage and ultrafast switching. The ultrawide band generator based on GaAs PCSS can achieve miniaturization, modularization and array. For decades, there were several theories explaining the phenomena in the avalanche PCSS with consideration of field-dependent trapping of charge carriers, deep impurity ionization, double injection, avalanche injection, localized impact ionization, streamer formation, collective impact ionization, and photo-activated charge domain. However, the operation mechanism, especially the lock-on effect, of the GaAs PCSS in the avalanche mode is still unclear.
Operating mechanism of low-energy-triggered GaAs PCSS was analyzed using a one-dimensional physics-based numerical simulation. The transient process of physical parameters in filament was discussed. The physics of multiple avalanche domains as the operating mechanism of the PCSS in avalanche mode was described, which leads to characteristics of low-energy triggering, ultrafast switching and voltage locking of the switch. When a 905-nm optical pulse with the power of 12 W triggered the PCSS from cathode, the switch reached a high conducting state in 147 ps after a delay time of 3.0 ns, and then turn-on voltage across the PCSS was locked at an electric field of about 3.9 kV/cm due to existing of residual avalanche domains in filament. The transient process can be divided into three stages containing delay, ultrafast switching and votage locking. In the delay stage, the intrinsic positive feedback causes formation of multiple avalanche domains and dense electron-hole plasma. In the ultrafast switching stage, the increase of plasma density leads to the increase of domain field and drastic domain shrinkage that reduces voltage across the structure very fast. Further increase of plasma density results in domains annihilation including reduction of domain width, peak field and domain number, and ultrafast switching sustainable occurs. At the last stage, the PCSS turns into voltage locking stage due to the existence of a small quantity of avalanche domains in the high conductivity structure. Moreover, the phenomenon of picosecond current oscillations was observed numerically in the avalanche GaAs PCSS, and the peak-to-peak amplitude of these current signals is about 0.04~0.25 A, and the oscillating period is about 3.8~6.1 ps.The physical reason was also discussed by evolution of avalanche domains in the filament.
Based on the investigation on the switching mechanism, the experimental study of the GaAs PCSS with 4 mm gap biased at 17.5 kV was carried out using in a 50 Ω pulse forming line. When the pulse forming line was charged to 17.5 kV, the laser pulse from a laser diode module triggered the GaAs PCSS at cathode side. The PCSS turned into a conducting state, and the pulse was generated across the load resistance. The peak power of voltage pulse reaches MW level, and risetime of output pulse is only about 620 ps, and the highest repetition rate is up to 20 kHz. The numeric switching time of GaAs PCSS is significantly less than that achieved in our experiment, which is caused mainly by parasitic inductance in experimental circuit.

Key words： Pulsed power photoconductive semiconductor switch (PCSS) avalanche domain low-energy triggering sub-nanosecond

Received: 19 July 2022

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	Articles by authors
	Xu Shouli¹
	Liu Jingliang¹
	Hu Long²
	Ni Tao¹
	Xu Chunliang¹

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Xu Shouli¹,Liu Jingliang¹,Hu Long²等. Operating Mechanism of Low-Energy-Triggered Gallium Arsenide Photoconductive Semiconductor Switch[J]. Transactions of China Electrotechnical Society, 2023, 38(22): 6241-6252.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.221390 OR https://dgjsxb.ces-transaction.com/EN/Y2023/V38/I22/6241

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