计及热阻与发射极电感匹配的并联IGBT芯片稳态结温均衡方法

doi:10.19595/j.cnki.1000-6753.tces.210751

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Abstract In the IGBT device with the parallel chips, the thermal resistance and emitter parasitic inductance are the key parameters which determine the steady junction temperature distribution. Therefore, to equalize the steady junction temperature of the parallel chips, it is vital to design the thermal resistance and emitter parasitic inductance reasonably. In this paper, an electrothermal model with two parallel IGBT chips is established to investigate the impacts of the junction temperature and the emitter parasitic inductance on the dynamic losses. Then, the effects of thermal resistance and emitter parasitic inductance on the temperature distribution are further studied by the electrothermal coupling simulation. On this basis, the steady temperature equalization method for the parallel IGBT chips is put forward. The proposed method can obtain the reference values of the thermal resistance or emitter parasitic inductance by solving the equation set rather than the complicated electrothermal calculation. Finally, taking two parallel IGBT chips as an example, the steady junction temperature of the parallel chips at different frequencies is demonstrated, which shows the effectiveness of the method.

Key words： Parallel IGBT chips thermal resistance emitter parasitic inductance steady temperature equalization method

Received: 24 May 2021

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TM46

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	Articles by authors
	Fan Jiayu
	Zheng Feilin
	Wang Yaohua
	Li Xuebao
	Cui Xiang

Cite this article:

Fan Jiayu,Zheng Feilin,Wang Yaohua等. Steady Temperature Equalization Method for the Parallel IGBTs Considering the Thermal Resistance and the Matching Emitter Parasitic Inductance[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3028-3037.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210751 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I12/3028

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