阻抗分析仪测量功率MOSFET器件栅极分离电容<em>C</em>-<em>V</em>特性的误差分析及调控方法

doi:10.19595/j.cnki.1000-6753.tces.210661

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Abstract The accurate measurement of the split C-V characteristics (C_GS-V_G and C_GD-V_G) of power MOSFET devices is very important for device modeling and gate oxide reliability evaluation. Impedance analyzer is the key equipment to measure the C_GS-V_G and C_GD-V_G. When using the impedance analyzer to measure a parameter of a three-terminal device, it is necessary to shield the non-measured third terminal to eliminate the introduced parallel impedance error. However, the power MOSFET device turns on when the gate voltage exceeds the threshold voltage, which affects the measurement circuit topology and introduces other measurement errors. In this paper, a detailed error analysis of the C_GS-V_G and C_GD-V_G measured by the impedance analyzer was carried out, and the reason of measurement error was revealed. The equivalent circuit model of the measurement was established, and the analytical expression of the measurement error was given. The error analysis was quantified and the effectiveness of the equivalent circuit model was verified by combining experiment and numerical analysis. Finally, three control methods that can achieve accurate measurement of C-V characteristics were proposed and verified by experiments. The results show that the measurement error occurs after the device turns on. The drain and source of the device transition from capacitance to low resistance. The parasitic inductance of the guarding (L₅) is shunted from the equivalent input impedance of the automatic balance bridge (L₃), which introduces errors. An accurate measurement under different frequencies can be achieved when L₃and L₅satisfya certain matching relationship.

Key words： Power MOSFET device impedance analyzer split C-V characteristics equivalent circuit model error analysis

Received: 10 May 2021

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TN386

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	Articles by authors
	Cai Yumeng
	Zhao Zhibin
	Xu Zike
	Sun Peng
	Li Xuebao

Cite this article:

Cai Yumeng,Zhao Zhibin,Xu Zike等. Error Analysis and Regulation Method of Impedance Analyzer in Measuring Split C-V Characteristics of Power MOSFET Device[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3016-3027.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210661 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I12/3016

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