基于开关轨迹优化的SiC MOSFET有源驱动电路研究综述

doi:10.19595/j.cnki.1000-6753.tces.210560

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Abstract With the popularization of SiC MOSFETs, the problems of overshoot, oscillation and electromagnetic interference in the switching transient process have attracted more and more attention. As a novel driver, active gate driver (AGD) is widely used in the switching trajectory optimization of SiC MOSFETs. First of all, this paper analyzes the working principle of the AGD circuit, and gives the influence of different driving parameters on the switching characteristics. Secondly, this paper focuses on the working mode of the threshold-trigger type AGD circuit. It summarizes the AGD circuit from the three aspects of transient positioning technology, logic processing architecture, and power amplification topology. The advantages and disadvantages of different technologies are evaluated, and the process of AGD circuit design is proposed. Finally, the development trend of AGD circuit for SiC MOSFET switch trajectory is discussed.

Key words： SiC MOSFET active gate driver (AGD) switching trajectory oscillation

Received: 20 April 2021

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	Wang Ning
	Zhang Jianzhong

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Wang Ning,Zhang Jianzhong. Review of Active Gate Driver for SiC MOSFET with Switching Trajectory Optimization[J]. Transactions of China Electrotechnical Society, 2022, 37(10): 2523-2537.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210560 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I10/2523

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