基于主动栅极驱动的IGBT开关特性自调节控制

doi:10.19595/j.cnki.1000-6753.tces.210102

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Abstract The widely used conventional gate drive (CGD) has limited effects as to the control and optimization of switching characteristics of insulated gate bipolar transistors (IGBTs). Besides, when the switching conditions change, CGD cannot keep the device characteristics in an optimal state, i.e., it lacks self-regulating ability. Numerous active gate drive (AGD) methods have been developed to realize the self-regulating control. However, problems such as control stability and control accuracy will occur when applying this control. In this paper, to solve these problems, three key design points regarding the self-regulating control are proposed and verified by experiments, which provides a reference for AGD methods to achieve self-regulating control. This paper summarizes the control of IGBT turn-off peak voltage and proposes a novel circuit for precise sensing of IGBT collector-emitter peak voltage. It is shown that by combining the peak sensing circuit and self-regulating control, the peak voltage can be regulated with high accuracy, laying a solid foundation for safe and low-loss turn off for power semiconductors.

Key words： IGBT switching characteristics self-regulating control active gate drive turn-on delay turn-off voltage peak

Received: 19 January 2021

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TM315

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	Articles by authors
	Ling Yatao
	Zhao Zhengming
	Ji Shiqi

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Ling Yatao,Zhao Zhengming,Ji Shiqi. Self-Regulating Control of IGBT Switching Characteristics with Active Gate Drive[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2482-2494.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.210102 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/I12/2482

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