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| Infrared Radiation Defect Detection and Imaging Technique under Active Electromagnetic Induction Excitation for Crystalline Silicon Photovoltaic Cells |
| Yang Ruizhen1,2, Du Bolun3, He Yunze1,4, Huang Shoudao1, Zhang Hong4 |
1. College of Electrical and Information Engineering Hunan University Changsha 410082 China;
2. College of Civil Engineering Changsha University Changsha 410000 China;
3. School of Electrical Engineering and Automation Wuhan University Wuhan 430072 China;
4. Fujian Province Key Laboratory of Nondestructive Testing Fuqing Branch of Fujian Normal University Fuqing 350300 China |
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Abstract Defects can affect the efficiency and service life of crystalline silicon photovoltaic cells and even cause serious damage to grid connected photovoltaic power generation systems. The purpose of this paper is to establish an infrared thermography defect detection method for silicon photovoltaic cells under the active electromagnetic induction. Compared with the surface defect detection method based on machine vision, the proposed method has the advantages of high detection sensitivity, internal defects and multi-type defect detection. Firstly, a digital electromagnetic induction thermal imaging system is established and the thermal imaging sequence of silicon cell is obtained under pulse and locked-in mode. Then, Fourier transform, independent component analysis (ICA), principal component analysis (PCA) and other methods are used to deal with thermography sequences. Finally, the visual inspection of hot spot, crack, broken gate and heavy doping in crystalline silicon photovoltaic cells has realized. The experimental results show that the proposed method can distinguish the background and the defects very well and provide a reliable and rapid means for the research, testing, manufacturing, service and maintenance of crystalline silicon photovoltaic cells.
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Received: 13 April 2018
Published: 15 February 2019
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2018, Vol. 33 
