|
|
|
| IGBT Gate Characteristics and Parameter Extraction Methods |
| Tang Yong, Hu An, Chen Ming |
| Naval University of Engineering Wuhan 430033 China |
|
|
|
|
Abstract The insulated gate bipolar transistor has been extensively used in all kinds of power electronics devices, but for a long time, the absence of effective methods for its parameters extraction limited the employment of simulator models, which also restricted the development of device application level. This paper compares the planar gate structure with the trench gate structure of IGBT, and carries on theoretic analysis and formulary derivation based on its work principle and semiconductor physics. According to the flaws of existing ways, a series of new parameter extraction methods for gate parameters is proposed. The results of extraction experiments under different working condition show good consistency, which also proves the accuracy of proposed extraction methods.
|
|
Received: 07 November 2008
Published: 17 February 2014
|
|
|
|
|
|
[1] 王兆安, 张明勋. 电力电子设备设计和应用手 册[M]. 北京: 机械工业出版社, 2002.
[2] 周文定, 亢宝位. 不断发展中的IGBT技术概述[J]. 电力电子技术, 2007, 41 (9): 115-118.
[3] Ruthing H, Umbach F, Hellmund O, et al. 600V- IGBT3: trench field stop technology in 70pm ultra thin wafer technology[C]. ISPSD, Cambridge, UK, 2003: 63-66.
[4] Sheng Kuang, Williams B W, Finney S J. A review of IGBT models[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1250-1266.
[5] Hefner A R, Bouche S. Automated parameter extraction software for advanced IGBT modeling[C]. Proc. of IEEE Workshop on Computers, Blacksburg, July, 2000: 10-18.
[6] Kang X, Santi E, Hudgins J L, et al. Parameter extraction for a physics-based circuit simulator IGBT model[C]. Proc . IEEE Applied Power Electronics Conf., (APEC’03), 2003: 946-952.
[7] Angus T Bryant, Kang Xiaosong, Enrico Santi, et al. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models[J]. IEEE Transactions on Power Electronics, 2006, 21( 2): 295-308.
[8] Udrea F, Amaratuniga G A. Theorical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors[J]. IEEE Transaction on Electron Devices, 1995, 42(7): 1356- 1366.
[9] Hefner A R. Modeling buffer layer IGBT’s for circuit simulation[J]. IEEE Transactions on Power Electronics, 1995, 10(2): 111-123.
[10] Hefner A R , Blackburn D L. An analytical model for the steady-state and transient characteristics of the power insulated gate bipolar transistor[J]. Solid State Electronics, 1988, 31(10): 1513 -1532. |
|
|
|
2009, Vol. 24 
